Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities

Microdisk resonator with a linear defect at some distance away from the circumference is studied theoretically. We demonstrate that the presence of the defect leads to (i) enhancement of the output efficiency, and (ii) directionality of the outgoing light. The dependence of the radiative losses and of the far-field distribution on the position and orientation of the defect are calculated. The angular dependence of the far field is given by a lorentzian with a width that has a sharp minimum for a certain optimal orientation of the defect line. For this orientation the whispering-gallery mode of a circular resonator is scattered by the extended defect in the direction normal to the disk boundary.

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“…Nitride-based lasers operating at λ ≈ 0.4µm [19][20][21] have much higher M -values (200 < ∼ M < ∼ 600) and n ≈ 2.8. This yields FWHM of 64…”

Section: Discussionmentioning

confidence: 99%

Directional emission from a microdisk resonator caused by a linear defect

Apalkov

Raǐkh

2003

Physica B: Condensed Matter

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“…We have reported the fabrication of regularly arranged GaN nanocolumns [10] and GaN nanowalls [11] by RF-MBE using a Ti-mask SAG method [12]. At the same time, GaN and InGaN nanorings have also been fabricated [13][14][15], whose ring structures are attractive from the viewpoint of application to ring resonators [16] and Whisperinggallery mode resonators with a controlled ring diameter [17]. H. W. Choi et al fabricated nanoscale site-controlled ring structures with an internal diameter of 500 nm and a wall width of 300 nm, in which Fresnel diffraction effects were utilized for the spontaneous assembly of the nanoring [13].…”

Section: Introductionmentioning

confidence: 99%

Ti‐mask selective‐area growth of GaN nanorings by RF‐plasma‐assisted molecular‐beam epitaxy

Kouno¹,

Kishino²,

Sekiguchi³

et al. 2009

Phys. Status Solidi (c)

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GaN nanorings with InGaN/GaN multiple quantum wells (MQWs) were successfully fabricated on a GaN template by RF‐plasma‐assisted molecular‐beam epitaxy (RF‐MBE) using a titanium (Ti) mask selective‐area growth (SAG) technique. We employed focused ion beam (FIB) milling to make patterns on the Ti‐mask (ring groove patterns). 3‐period InGaN/GaN MQWs integrated into the GaN nanorings exhibited a clear room‐temperature photoluminescence (RT‐PL) spectrum with a peak wavelength of 462 nm and the full width at half maximum (FWHM) of the RT‐PL spectrum was 145 meV. In addition, we fabricated GaN double nanorings and hexagonal nanorings with InGaN/GaN MQWs by controlling the amount of FIB etching, and the growth conditions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The micro-ring design is commonly used in the fabrication of optics components such as resonators, filters and modulators [6,7], but has not been, to the best of our knowledge, adopted for semiconductor-based emissive devices, although optical studies on InGaN micro-ring structures have been reported [8,9]. The benefits of the micro-ring LEDs will be explored in this work, and their characteristics critically compared to conventional LEDs.…”

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confidence: 97%

InGaN light emitting diodes of micro‐ring geometry

Choi

Jeon

Dawson

2003

phys. stat. sol. (c)

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PACS 78.60.Fi, 85.60 JbThe fabrication and performance of an InGaN light-emitting diode (LED) array based on a micro-ring device geometry is reported. This design has been adopted in order to increase the surface area for light extraction and to minimize losses due to internal reflections and re-absorption. Electrical characteristics of these devices are similar to those of a conventional large-area LED, whilst the directed light extraction proves to be superior. In fact, these devices are found to be more efficient when operated at higher currents. This may be attributed to improved heat sinking due to the large surface area to volume ratio. The potential applications of these devices are also discussed.

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Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities

Abstract: Articles you may be interested inMapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes Appl.Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

Cited by 51 publications

References 14 publications

Directional emission from a microdisk resonator caused by a linear defect

Directional emission from a microdisk resonator caused by a linear defect

Ti‐mask selective‐area growth of GaN nanorings by RF‐plasma‐assisted molecular‐beam epitaxy

InGaN light emitting diodes of micro‐ring geometry

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