2005
DOI: 10.1016/j.spmi.2005.08.002
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Optical properties of ZnO-based quantum structures

Abstract: The optical properties of ZnO quantum wells, which have potential application of short-wavelength semiconductor laser utilizing a high-density excitonic effect, were investigated. Stimulated emission of excitons was observed at temperatures well above room temperature due to the adoption of the lattice-matched substrates. The mechanism of stimulated emission from ZnO quantum wells is discussed in this paper.

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Cited by 7 publications
(2 citation statements)
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“…However, ZnO, while also emitting in the UV range, has an even larger exciton binding energy, ranging from 60 meV for bulk ZnO to about 110 meV for ZnO/(Zn,Mg)O quantum wells, which allows for high-efficiency light emission by improved exciton–photon coupling and the possibility of achieving strong carrier localization, even at room temperature. Moreover, ZnO exhibits pronounced nonlinear properties, which makes ZnO-based devices even more applicable not only for room-temperature UV lasers and single-photon sources but also for polariton lasers. In addition to that, an efficient multiphoton absorption enables compatibility for integrated circuits with well-developed IR light sources. Besides high availability, the low-energy photons of IR light sources, in contrast to UV, are less likely to be absorbed and thus allow for a variety of materials within a photonic circuit.…”
mentioning
confidence: 99%
“…However, ZnO, while also emitting in the UV range, has an even larger exciton binding energy, ranging from 60 meV for bulk ZnO to about 110 meV for ZnO/(Zn,Mg)O quantum wells, which allows for high-efficiency light emission by improved exciton–photon coupling and the possibility of achieving strong carrier localization, even at room temperature. Moreover, ZnO exhibits pronounced nonlinear properties, which makes ZnO-based devices even more applicable not only for room-temperature UV lasers and single-photon sources but also for polariton lasers. In addition to that, an efficient multiphoton absorption enables compatibility for integrated circuits with well-developed IR light sources. Besides high availability, the low-energy photons of IR light sources, in contrast to UV, are less likely to be absorbed and thus allow for a variety of materials within a photonic circuit.…”
mentioning
confidence: 99%
“…However, many of the material parameters for MgO are not well known, so we assumed the parameters to be equal to those of ZnO as a first approximation in the case of a lack of available data, so in the MgO hole, electron masses have been assumed to be the same as for ZnO. We propose that the Mg composition in the Zn 1−x Mg x O barrier is relatively small (x = 0.2) [46]. The formation of a heterojunction between ZnO and Zn 1−x Mg x O has been reported to be a type I heterojunction with a conduction band offset ΔE c = 314.19 meV and a valence band offset ΔE v = 34.91 meV [47,48].…”
Section: Resultsmentioning
confidence: 99%