“…The Zn 3 P 2 film is optically transparent with a peak at ∼470 nm in the UV−vis spectrum (Figure d), corresponding to a blue shift relative to bulk Zn 3 P 2 . This is consistent with quantum confinement effects previously reported for Zn 3 P 2 films and nanocyrstals. 31b, Zn 3 P 2 , a semiconductor with a band gap in the range of visible light (1.51 eV), has had recent interest as a low-cost semiconductor for use in hybrid solar cells because it absorbs light at the most intense wavelength of sunlight. ,− Reactions of Zn films, which are easily deposited by thermal evaporation, with TOP, a commercially available reagent, may provide a convenient alternative method for producing Zn 3 P 2 -based solar cells. 7 Zn 3 P 2 film made by reacting thermally evaporated 100 nm Zn film with hot TOP: (a) digital photograph comparing Zn film precursor with transparent Zn 3 P 2 product; SEM images of (b) Zn film and (c) Zn 3 P 2 film; (d) optical spectrum of Zn 3 P 2 film with λ max at ∼470 nm.…”
Section: Resultssupporting
confidence: 88%
“…(Zn 3 P 2 nanocrystals have not been prepared using this strategy because isolatable Zn nanoparticle precursors could not be prepared by standard methods. Zn 3 P 2 nanocrystals and films have been prepared by other methods however. − ) InP can also form from reaction of In metal with TOP, although a small In impurity remains. This behavior is consistent with, and slightly improved upon, that observed previously for the incomplete reaction of In with TOP …”
Metal phosphides can have important properties such as superconductivity, magnetoresistance,
magnetocaloric behavior, catalytic activity, and lithium intercalation capacity, which make them useful
for a variety of technological applications. Bulk metal phosphides usually require high temperatures and
harsh reaction conditions to form, and metal phosphide nanocrystals can also be challenging to synthesize.
Here we elaborate on a recently developed alternative approach for synthesizing metal phosphides, which
involves the solution-mediated reaction of pre-formed metals with trioctylphosphine (TOP) at temperatures
below 370 °C. This chemical conversion strategy is shown to be general and highly versatile, successfully
forming a wide range of transition-metal and post-transition-metal phosphides using a range of both bulk
and nanoscale metals as precursors. Metal nanocrystals, bulk powders, foils, wires, thin films,
lithographically patterned substrates, and supported nanocrystals can all be converted to metal phosphides
by reaction with TOP. Collectively, this represents a general, unified, and robust strategy for forming
metal phosphides using readily available reagents and metal precursors.
“…The Zn 3 P 2 film is optically transparent with a peak at ∼470 nm in the UV−vis spectrum (Figure d), corresponding to a blue shift relative to bulk Zn 3 P 2 . This is consistent with quantum confinement effects previously reported for Zn 3 P 2 films and nanocyrstals. 31b, Zn 3 P 2 , a semiconductor with a band gap in the range of visible light (1.51 eV), has had recent interest as a low-cost semiconductor for use in hybrid solar cells because it absorbs light at the most intense wavelength of sunlight. ,− Reactions of Zn films, which are easily deposited by thermal evaporation, with TOP, a commercially available reagent, may provide a convenient alternative method for producing Zn 3 P 2 -based solar cells. 7 Zn 3 P 2 film made by reacting thermally evaporated 100 nm Zn film with hot TOP: (a) digital photograph comparing Zn film precursor with transparent Zn 3 P 2 product; SEM images of (b) Zn film and (c) Zn 3 P 2 film; (d) optical spectrum of Zn 3 P 2 film with λ max at ∼470 nm.…”
Section: Resultssupporting
confidence: 88%
“…(Zn 3 P 2 nanocrystals have not been prepared using this strategy because isolatable Zn nanoparticle precursors could not be prepared by standard methods. Zn 3 P 2 nanocrystals and films have been prepared by other methods however. − ) InP can also form from reaction of In metal with TOP, although a small In impurity remains. This behavior is consistent with, and slightly improved upon, that observed previously for the incomplete reaction of In with TOP …”
Metal phosphides can have important properties such as superconductivity, magnetoresistance,
magnetocaloric behavior, catalytic activity, and lithium intercalation capacity, which make them useful
for a variety of technological applications. Bulk metal phosphides usually require high temperatures and
harsh reaction conditions to form, and metal phosphide nanocrystals can also be challenging to synthesize.
Here we elaborate on a recently developed alternative approach for synthesizing metal phosphides, which
involves the solution-mediated reaction of pre-formed metals with trioctylphosphine (TOP) at temperatures
below 370 °C. This chemical conversion strategy is shown to be general and highly versatile, successfully
forming a wide range of transition-metal and post-transition-metal phosphides using a range of both bulk
and nanoscale metals as precursors. Metal nanocrystals, bulk powders, foils, wires, thin films,
lithographically patterned substrates, and supported nanocrystals can all be converted to metal phosphides
by reaction with TOP. Collectively, this represents a general, unified, and robust strategy for forming
metal phosphides using readily available reagents and metal precursors.
“…Figure shows a reflection spectrum from 1 to 2 eV (Figure (a)) and photoluminescence (PL) spectrum under the excitation of 326 nm at room temperature (Figure (b)). From the reflectance spectrum it can be seen that energies below 1.4 eV are almost totally reflected by the Zn 3 P 2 nanostructures without absorption, while a distinct edge was found at approximately 1.4 eV, indicating a strong absorption of higher energies . The corresponding PL spectrum provides direct evidence of this distinct absorption edge, at which a broad peak of 1.4−1.7 eV can be found.…”
Hierarchical tree-shaped nanostructures, nanobelts, and nanowires of Zn 3 P 2 were synthesized in a thermal assisted laser ablation process. All nanostructures are tetragonal phased Zn 3 P 2 with excellent crystallinity and are free from an oxidization layer according to electron microscopy and X-ray diffraction analyses. Optical measurement revealed a strong absorption from the ultraviolet to near-infrared regions. Optoelectronic devices fabricated using individual nanowires demonstrate a high sensitivity and rapid response to impinging light. A crossed heterojunction of an n-type ZnO nanowire and a p-type Zn 3 P 2 nanowire has been characterized, and it offers a great potential for a high efficient spatial resolved photon detector.Being a novel optoelectronic material, Zn 3 P 2 has the following advantages over some other materials. It has a direct band gap in the range of 1.4-1.6 eV, which is the optimum range for solar energy conversion. The large optical absorption coefficient (>10 4 cm -1 ) and a long minority diffusion length (∼13 µm) of Zn 3 P 2 permit high current collection efficiency. 1 In addition, the constituent materials are abundant and cheap and would allow the large scale deployment of such devices as solar cells, infrared (IR) and ultraviolet (UV) sensors, lasers, and light polarization step indicators. 2,3 In order to investigate the potential applications of Zn 3 P 2 , several kinds of heterojunctions have been designed, such as InP/Zn 3 P 2 , 4 Mg/Zn 3 P 2 , 5 Zn 3 P 2 /ZnSe, 2,6 ITO/ Zn 3 P 2 , 7 and ZnO/Zn 3 P 2 . 8 However, the majority of research on Zn 3 P 2 has been limited to thin films, and very little work has been done in the nanoscale range except for very few reports on the synthesis of Zn 3 P 2 nanoparticles 9-11 and on the synthesis of nanotrumpets with an unavoidable ZnO layer coated on the surface. 12 Because of the large excitonic radii, Zn 3 P 2 is expected to exhibit pronounced quantum size effect, which has been observed for Zn 3 P 2 nanoparticles. 10 To the best of our knowledge, the electric property and photoresponse of Zn 3 P 2 nanostructures, and heterojunctions made from Zn 3 P 2 nanostructures, have not been reported thus far.In this paper we report for the first time the synthesis of single crystalline tree-shape Zn 3 P 2 structure arrays, nanowires, and nanobelts. The morphology and crystal structure were determined by electron microscopy and analytical techniques. In addition, the optical property of the synthesized nanostructures has been measured through photoluminescence (PL). Furthermore, we also present the crossed heterojunction made using a ZnO nanowire and a Zn 3 P 2 nanowire. Optoelectronic measurements of single Zn 3 P 2 nanowire and the crossed heterojunction indicate that Zn 3 P 2 was very sensitive to light and the heterojunction exhibits enhanced performance, which implies that the Zn 3 P 2 nanostructures have promising applications in optoelectronics.
“…Intrinsically, Zn 3 P 2 is a semiconductor with a direct band gap of 1.5 eV, a high absorption coefficient of 10 4 to 10 5 cm À1 , and long carrier diffusion lengths of $10 mm, which makes it a very promising material for photovoltaic (PV) applications. [2][3][4][5][6][7][8][9][10][11][12][13][14][15] Additionally, it is constituted from sustainable earth-abundant elements. While Zn 3 P 2 has many of the bulk properties required to be a high efficiency solar cell absorber, the current record efficiency of 6% is still well below the theoretical limit (>30%).…”
Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the...
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