Optical properties of zinc nitride thin films fabricated by rf-sputtering from ZnN target

Voulgaropoulou, P.; Dounis, S.; Kambilafka, V.; Androulidaki, M.; Ruzinsky, M.; Šály, V.; Prokein, P.; Viskadourakis, Z.; Tsagaraki, K.; Aperathitis, E.

doi:10.1016/j.tsf.2008.04.025

Cited by 14 publications

(5 citation statements)

References 19 publications

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“…N-type conduction and Hall mobilities above 100 cm 2 V −1 s −1 have been previously reported for these films [5][6][7]. In this topic, Zn 3 N 2 thin films have been used as an alternative to obtain p-type ZnO:N after a thermal annealing [8][9][10]. However, further research is still necessary to understand the properties of this material, especially concerning its stability [10].…”

Section: Introductionmentioning

confidence: 99%

Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

Dominguez

Pau

Redondo-Cubero

2019

Semicond. Sci. Technol.

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In this work, an unusual ambipolar behavior in zinc nitride (Zn 3 N 2 ) based thin film transistors (TFTs) on plastic substrates is presented. Polyethylene terephthalate is used as flexible substrate. The Zn 3 N 2 thin film is deposited by magnetron radio-frequency sputtering at room temperature, whereas spin-on glass is used as gate insulator. The transfer and output characteristics are the typical reported for ambipolar TFTs. The extracted linear mobility was 1.8 cm 2 V −1 s −1 for the n-type region and 0.15 cm 2 V −1 s −1 for the p-type region. Using a physically-based simulator, the ambipolar output characteristics are simulated. The results presented are promising to develop novel ambipolar Zn 3 N 2 TFTs.

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Section: Introductionmentioning

confidence: 99%

Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

Dominguez

Pau

Redondo-Cubero

2019

Semicond. Sci. Technol.

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“…A relatively stable way of fabricating p-type ZnO could be to replace nitrogen with oxygen in Zn 3 N 2 [12, 13]. Zinc nitride can be used for deposition of thin transparent, conducting films of p-type ZnO which have excellent applications in light-emitting diodes, laser diodes, and cheap solar cells [9, 13, 14]. These properties make Zn 3 N 2 an interesting material to study.…”

Section: Introductionmentioning

confidence: 99%

XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

Haider

2017

Nanoscale Res Lett

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Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N2/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn3N2 samples grown at lower N2/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N2/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N2/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N2/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn–N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies.

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“…The other band gaps were reported to be 3.2 eV by Kuriyama et al [7], 3.10 eV by W.S. Khan [8] and 3.36 eV by P. Voulgaropoulou [9].…”

Section: Introductionmentioning

confidence: 89%

“…All diffraction peaks in this spectrum can be indexed to cubic zinc nitride which agrees with standard pattern (JCPDS Card No.35-0762). P.Voulgaropoulou et al prepared the polycrystalline zinc nitride thin film by rf-sputtering with ZnN target on glass and Si wafers, with only one diffraction peak observed at (411)[9]. V.Kambilafka et al prepared the zinc nitride thin film by rf-sputtering with ZnN target on 1737 glass and Si wafers, the diffraction peak at 34.28° belongs to the (321) plane[3].Tianlin Yang et al prepared the zinc nitride thin film by rf-sputtering with Zn target on quartz substrate, the diffraction peak belongs to the (400) plane located at 36.…”

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confidence: 99%

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

Feng

Chen

2014

AMR

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Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

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Optical properties of zinc nitride thin films fabricated by rf-sputtering from ZnN target

Cited by 14 publications

References 19 publications

Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

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