Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Sato, Hitoshi; Chung, Roy B.; Hirasawa, Hirohiko; Fellows, Natalie; Masui, Hisashi; Wu, Feng; Saitô, Makoto; Fujito, Kenji; Speck, James S.; DenBaars, Steven P.; Nakamura, Shuji

doi:10.1063/1.2938062

Cited by 172 publications

(103 citation statements)

References 27 publications

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“…However, taking into account aggregate results of the above analysis, we have decided to choose the (1122) InGaN/GaN LEDs. Efficient long-wavelength emission of these devices has been also reported many times (see, e.g., [23][24][25][26][27]) and their structures seem to have currently more perspective advantages as green emitters [28] among reported orientations to date. In particular, expected highpower green (516 nm) emission has been reported by Sato et al [29] from the InGaN/GaN multi-quantum-well LED manufactured on the (1122) GaN substrate.…”

Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 99%

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

2013

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Polarization effects are studied within nitride light-emitting diodes (LEDs) manufactured on standard polar and semipolar substrates. A new theoretical approach, somewhat different than standard ones, is proposed to this end. It is well known that when regular polar GaN substrates are used, strong piezoelectric and spontaneous polarizations create built-in electric fields leading to the quantumconfined Stark effects (QCSEs). These effects may be completely avoided in nonpolar crystallographic orientations, but then there are problems with manufacturing InGaN layers of relatively high Indium contents necessary for the green emission. Hence, a procedure leading to partly overcoming these polarization problems in semi-polar LEDs emitting green radiation is proposed. The (1122) crystallographic substrate orientation (inclination angle of 58 • to c plane) seems to be the most promising because it is characterized by low Miller-Bravais indices leading to highquality and high Indium content smooth growth planes. Besides, it makes possible an increased Indium incorporation efficiency and it is efficient in suppressing QCSE. The In 0.3 Ga 0.7 N/GaN QW LED grown on the semipolar (1122) substrate has been found as currently the optimal LED structure emitting green radiation.

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Section: Designing Of Nitride Leds With Reduced Polarization Effectsmentioning

confidence: 99%

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

2013

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“…2,3 Efficient green and yellow semipolar ð11 22Þ InGaN single quantum-well LEDs grown on free-standing ð11 22Þ GaN substrates with threading dislocation densities below 10 7 cm À2 have been recently demonstrated. 4,5 However, the free-standing GaN substrates required for this approach remain small and expensive. Therefore, hetero-epitaxially grown semipolar structures continue to be of interest due to the much lower cost and larger substrate sizes available.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Dinh

Oehler

Zubialevich

et al. 2014

Journal of Applied Physics

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InGaN layers were grown simultaneously on (112¯2) GaN and (0001) GaN templates by metalorganic vapour phase epitaxy. At higher growth temperature (≥750 °C), the indium content (<15%) of the (112¯2) and (0001) InGaN layers was similar. However, for temperatures less than 750 °C, the indium content of the (112¯2) InGaN layers (15%–26%) were generally lower than those with (0001) orientation (15%–32%). The compositional deviation was attributed to the different strain relaxations between the (112¯2) and (0001) InGaN layers. Room temperature photoluminescence measurements of the (112¯2) InGaN layers showed an emission wavelength that shifts gradually from 380 nm to 580 nm with decreasing growth temperature (or increasing indium composition). The peak emission wavelength of the (112¯2) InGaN layers with an indium content of more than 10% blue-shifted a constant value of ≈(50–60) nm when using higher excitation power densities. This blue-shift was attributed to band filling effects in the layers.

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“…6,7 Semipolar nitride films have been mostly grown by using lateral epitaxial overgrowth techniques 8 but also on m-plane sapphire, 9 Si͑001͒, 10 and semipolar GaN bulk substrates. 11,12 The structural characteristics of the nonpolar and semipolar nitride films are expected to be anisotropic as a result of the anisotropies of film and substrate surfaces. Indeed, the full widths at half maximum ͑FWHMs͒ of the on-axis ͑1120͒ rocking curves ͑RCs͒ of a-plane GaN films were reported to have either an "M" or a "W" shape dependence on the azimuth angle with minimum FWHM parallel to the GaN ͓0001͔ or ͓1100͔ directions.…”

Section: Introductionmentioning

confidence: 99%

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

Darakchieva

Xie

Franco

et al. 2010

Journal of Applied Physics

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We present a detailed study of the structural characteristics of molecular beam epitaxy grown nonpolar InN films with a-and m-plane surface orientations on r-plane sapphire and ͑100͒ ␥-LiAlO 2 , respectively, and semipolar ͑1011͒ InN grown on r-plane sapphire. The on-axis rocking curve ͑RC͒ widths were found to exhibit anisotropic dependence on the azimuth angle with minima at InN ͓0001͔ for the a-plane films, and maxima at InN ͓0001͔ for the m-plane and semipolar films. The different contributions to the RC broadening are analyzed and discussed. The finite size of the crystallites and extended defects are suggested to be the dominant factors determining the RC anisotropy in a-plane InN, while surface roughness and curvature could not play a major role. Furthermore, strategy to reduce the anisotropy and magnitude of the tilt and minimize defect densities in a-plane InN films is suggested. In contrast to the nonpolar films, the semipolar InN was found to contain two domains nucleating on zinc-blende InN͑111͒A and InN͑111͒B faces. These two wurtzite domains develop with different growth rates, which was suggested to be a consequence of their different polarity. Both, a-and m-plane InN films have basal stacking fault densities similar or even lower compared to nonpolar InN grown on free-standing GaN substrates, indicating good prospects of heteroepitaxy on foreign substrates for the growth of InN-based devices.

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Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates

Cited by 172 publications

References 27 publications

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Structural anisotropy of nonpolar and semipolar InN epitaxial layers

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