Al–YF3–Al (MIM) capacitors are formed by thermal evaporation under a vacuum of 2.66 × 10−3 Pa. The thickness of the dielectric film (YF3) is measured by MBI. From X‐ray diffraction studies, the structure of the film is found to be amorphous in nature. Aging, annealing, dielectric, and ac conduction studies are made for these films. It is observed that due to aging the capacitance becomes constant after about 25 days and it decreases with repeated annealing cycles. The dielectric constant for a film of thickness 136 nm at 1 kHz and at room temperature is found to be 13.58. AC conduction studies reveal that the conduction mechanism is electronic hopping. The activation energy is estimated from the slope of conductivity versus inverse absolute temperature plot to 0.509 eV.