1995
DOI: 10.1007/bf01151535
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Optical properties of undoped and chromium-doped VA-VIA-VIIA single crystals

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Cited by 25 publications
(10 citation statements)
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“…SbSI films can be prepared by hydrothermal methods [269] or simple solution processing methods [270]. In addition, SbSI single crystals can be synthesized via the vertical Bridgeman technique [271] or CVT [272]. Due to the anisotropy of SbSI, it is still difficult to fabricate large-area and uniform single crystalline samples.…”
Section: V-vi-vii Materialsmentioning
confidence: 99%
“…SbSI films can be prepared by hydrothermal methods [269] or simple solution processing methods [270]. In addition, SbSI single crystals can be synthesized via the vertical Bridgeman technique [271] or CVT [272]. Due to the anisotropy of SbSI, it is still difficult to fabricate large-area and uniform single crystalline samples.…”
Section: V-vi-vii Materialsmentioning
confidence: 99%
“…In BiSI, the valence band maximum (VBM) and CBM occur between Y-G and G-Z, respectively, whereas in BiSeI, the VBM occurs between G-Z and the CBM is situated at G. The calculated band gaps for BiSI and BiSeI are 1.78 eV and 1.50 eV, respectively and are noticeably overestimated compared to experiment (1.57 eV and 1.29 eV for BiSI and BiSeI), which is likely due to the absence of thermal effects, including lattice expansion and electron-phonon coupling, when performing the calculations. The band gaps are both indirect (E i g ), as expected of group 15 chalcohalide semiconductors, 65,66 however, as the direct band gap (E d g ) is more relevant for thin lm solar absorbers, due to the requirement for high absorption coefficients (vertical optical transitions), it is provided in Table 2. The difference between the direct and indirect band gaps is only $0.1 eV, indicating that these materials are still suitable for thin lm photovoltaic applications.…”
Section: Electronic Structurementioning
confidence: 99%
“…Especially, bismuth-based chalcohalides like BiSI or BiSeI have attracted significant attention of late as photovoltaic (PV) materials789, attributed to their excellent semiconducting nature and narrow band gap (BiSI: 1.59 eV10 and BiSeI: 1.29 eV11), which enable the utilization of a wide range of solar spectrum. In addition, fine, tailored tuning of bands is strongly expected to be possible via arbitrary substitution between iodide and bromide, examples of which have been reported for some oxyhalide systems such as BiOBr 1− x I x 12.…”
mentioning
confidence: 99%