Optical properties of the c-axis oriented LiNbO3 thin film

Shandilya, Swati; Sharma, Anjali; Tomar, Monika; Gupta, Vinay

doi:10.1016/j.tsf.2011.09.030

Cited by 16 publications

(3 citation statements)

References 30 publications

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“…Many publications reported high thermal stresses and cracking in epitaxial LN/LT films, but little is known about the stress effect on the physical and structural properties of such films . LN and LT have very high thermal expansion along the a ‐axis, and the commonly used substrates for the growth of LN/LT films have thermal expansion several times lower than that of LN/LT ( Table 4 ).…”

Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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In 1928, Zachariasen discovered the LiNbO 3 phase. [1] The first single crystals were grown using the flux method by Matthias Over the past five decades, LiNbO 3 and LiTaO 3 single crystals and thin films have been studied intensively for their exceptional acoustic, electro-optical, and pyroelectric and ferroelectric properties. Today, LiNbO 3 single crystals in electro-optics are equivalent to silicon in electronics, and about 70% of radio-frequency (RF) filters, based on surface acoustic waves, are fabricated on these single crystals. These materials in the form of thin films are needed urgently for the development of the next-generation of high-frequency and/or wide-band RF filters or tuneable frequency filters adapted to the fifth generation of infrastructures/networks/communications. The integration of LiNbO 3 films in guided nanophotonic devices will allow higher operational frequencies, wider bandwidth, and miniaturized optical devices in line with improved electronic conversion. Here, the challenges and the achievements in the epitaxial growth of LiTaO 3 and LiNbO 3 thin films and their integration with silicon technology and to acoustic and guided nanophotonic devices are discussed in detail. The systematic representation and classification of all epitaxial relationships reported in the literature have been carried out in order to help the prediction of the epitaxial orientations in the new heterostructures. Future prospects of potential applications and the expected performances of thin film devices are overviewed, as well.Figure 2. Schematic representation of the layer transfer process by the ion slicing technique consisting of a) ion implantation, b) wafer bonding, c) laser irradiation or heating in order to obtain d) a single crystalline layer on the host (Si) substrate. Reproduced with permission. [53]Figure 3. a,b) Electron microscopy images and c) schematic diagram of a microresonator based on LiNbO 3 film on Si and fabricated by the layer transfer technique. Reproduced with permission. [53]The first reports on the growth of c-axis-oriented LN films by liquid phase epitaxy on an LT substrate and by RF sputtering Adv. Mater. Interfaces 2017, 4, 1600998 www.advmatinterfaces.de www.advancedsciencenews.com Figure 6. Frequency response of a) HBAR and b) FBAR based on thinned X-cut LiNbO 3 layer on Si. Schematic representations of a) HBAR and b) FBAR structures are given in the insets. Reproduced with permission. [78]

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Section: Growth Of Linbo3 and Litao3 Films By Chemical And Physical Mmentioning

confidence: 99%

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Bartasyte

Margueron

Baron

et al. 2017

Adv Materials Inter

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“…One of the promising materials for piezoelectric energy converters is LiNbO 3 , since it has high piezoelectric efficiency and Curie temperature, and meets environmental safety requirements (i.e., does not contain lead) [ 17 ]. Various technological methods are being used for LiNbO 3 films formation: epitaxy [ 18 ], chemical vapor deposition [ 19 ], reactive magnetron sputtering [ 20 ], sol-gel process [ 21 ], and pulsed laser deposition (PLD) [ 22 , 23 , 24 , 25 ]. The latter has shown a substantial prospective for the fabrication of multi-component inorganic films [ 26 ] since it enables the control of a number of technological parameters and makes it possible to obtain films with controlled properties [ 27 ].…”

Section: Introductionmentioning

confidence: 99%

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

et al. 2020

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Energy conversion devices draw much attention due to their effective usage of energy and resulting decrease in CO2 emissions, which slows down the global warming processes. Fabrication of energy conversion devices based on ferroelectric and piezoelectric lead-free films is complicated due to the difficulties associated with insufficient elaboration of growth methods. Most ferroelectric and piezoelectric materials (LiNbO3, BaTiO3, etc.) are multi-component oxides, which significantly complicates their integration with micro- and nanoelectronic technology. This paper reports the effect of the oxygen pressure on the properties of nanocrystalline lithium niobate (LiNbO3) films grown by pulsed laser deposition on SiO2/Si structures. We theoretically investigated the mechanisms of LiNbO3 dissociation at various oxygen pressures. The results of x-ray photoelectron spectroscopy study have shown that conditions for the formation of LiNbO3 films are created only at an oxygen pressure of 1 × 10−2 Torr. At low residual pressure (1 × 10−5 Torr), a lack of oxygen in the formed films leads to the formation of niobium oxide (Nb2O5) clusters. The presented theoretical and experimental results provide an enhanced understanding of the nanocrystalline LiNbO3 films growth with target parameters using pulsed laser deposition for the implementation of piezoelectric and photoelectric energy converters.

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“…Lithium niobate is a widely used material. As an excellent functional material, it exhibits outstanding chemical and physical properties such as ferroelectric, pyroelectric, piezoelectric, electro-optical, photorefractive and nonlinear properties [1,2]. Due to these effects, LiNbO 3 offers a wide range of applications such as waveguides, surface acoustic wave devices and nonvolatile memory elements [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

et al. 2014

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Thin films of lithium niobate (LiNbO 3 ) were studied by Fourier transform infrared and micro-Raman spectroscopy. The films were prepared on SiO 2 /Si substrate at substrate temperatures of 650, 700 and 750 • C from monocrystalline or sintered LiNbO 3 targets, using KrF excimer laser ablation. The films were polycrystalline. The changes of film properties and E and A 1 phonon spectra with deposition conditions were studied, and were compared with bulk data.

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Optical properties of the c-axis oriented LiNbO3 thin film

Cited by 16 publications

References 30 publications

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy

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Optical properties of the c-axis oriented LiNbO3 thin film

Cited by 16 publications

References 30 publications

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Toward High‐Quality Epitaxial LiNbO3 and LiTaO3 Thin Films for Acoustic and Optical Applications

Oxygen Pressure Influence on Properties of Nanocrystalline LiNbO3 Films Grown by Laser Ablation

Polycrystalline LiNbO3thin films characterized by infrared and Raman spectroscopy

Contact Info

Product

Resources

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Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Toward High‐Quality Epitaxial LiNbO₃ and LiTaO₃ Thin Films for Acoustic and Optical Applications

Polycrystalline LiNbO₃thin films characterized by infrared and Raman spectroscopy