Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces

Paki, Pauline; Leonelli, R.; Isnard, L.; Masut, R. A.

doi:10.1063/1.371728

Cited by 12 publications

(8 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To overcome this issue, different band gap tuning techniques have been proposed: optimization of growth parameters, [4][5][6][7] introduction of interface layers, 8,9 and postgrowth intermixing. [10][11][12][13][14][15][16] Intermixing is a thermally activated process that consists in atomic interdiffusion at the interface of materials with different alloy compositions.…”

Section: Introductionmentioning

confidence: 99%

Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing

Dion

Desjardins

Shtinkov

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

This work investigates the interdiffusion dynamics in self-assembled InAs/ InP͑001͒ quantum dots ͑QDs͒ subjected to rapid thermal annealing in the 600-775°C temperature range. We compare two QD samples capped with InP grown at either optimal or reduced temperature to induce grown-in defects. Atomic interdiffusion is assessed by using photoluminescence measurements in conjunction with tight-binding calculations. By assuming Fickian diffusion, the interdiffusion lengths L I are determined as a function of annealing conditions from the comparison of the measured optical transition energies with those calculated for InP / InAs 1−x P x / InP quantum wells with graded interfaces. L I values are then analyzed using a one-dimensional interdiffusion model that accounts for both the transport of nonequilibrium concentrations of P interstitials from the InP capping layer to the InAs active region and the P-As substitution in the QD vicinity. It is demonstrated that each process is characterized by a diffusion coefficient D ͑i͒ given by D ͑i͒ = D 0 ͑i͒ exp͑−E a ͑i͒ / k B T a ͒. The activation energy and pre-exponential factor for P interstitial diffusion in the InP matrix are E a ͑P-InP͒ = 2.7Ϯ 0.3 eV and D 0 ͑P-InP͒ =10 3.6Ϯ0.9 cm 2 s −1 , which are independent of the InP growth conditions. For the P-As substitution process, E a ͑P-As͒ = 2.3Ϯ 0.2 eV and ͑c o / n o ͒D 0 ͑P-As͒ ϳ 10 −5 −10 −4 cm 2 s −1 , which depend on the QD height and concentration of grown-in defects ͑c o / n o ͒.

show abstract

Section: Introductionmentioning

confidence: 99%

Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing

Dion

Desjardins

Shtinkov

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The classical techniques to investigate the optical properties of nanostructures like quantum dots are photoluminescence (PL) [1], photoluminescence excitation (PLE) [2], timeresolved photoluminescence [3] and photocurrent spectroscopy [4]. PL is the principal useful technique due to its relative simplicity.…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm

Chouaib

Chauvin

Bru‐Chevallier

et al. 2006

Applied Surface Science

View full text Add to dashboard Cite

“…However, the use of these nanostructures relies on achieving precise tunability of dot dimension, size, and composition in order to control both the wavelength and the linewidth of the luminescence emission. In addition to varying growth parameters such as growth interruption times, 2 group-V overpressure, 3 capping rate, 4 and the use of vicinal surfaces, 5 techniques such as the indium-flush procedure 6,7 have been developed with the intention to trim or convert an inhomogeneous QD population into quantum disks of approximately equal height. In the drive of finding a versatile bandgap tuning process, techniques such as laser-induced annealing, 8 impurity-free vacancy disordering, 9 ionimplantation-induced interdiffusion, 10 grown-in defects, 11,12 and dielectric capping 13 have also been proposed.…”

mentioning

confidence: 99%

Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Girard

Dion

Desjardins

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

We have investigated the effect of post-growth rapid thermal annealing on the low-temperature photoluminescence (PL) spectra of self-assembled InAs quantum dots (QDs) grown in InP(001) by chemical-beam epitaxy using both conventional and modified capping procedures. As-grown samples are characterized by a broad emission peak centered near 800–900 meV corresponding to distinct QD families of different sizes with no observable wetting-layer emission. Rapid thermal anneals were performed at 650 to 800 °C for 210 s, resulting in blueshifts of up to 120 meV due to intermixing. While the PL emission energies of the various QD families shift at similar rates upon annealing, the peak widths remain approximately constant. Finally, we show that the growth of a low-temperature InP cap layer containing a large number of point defects significantly enhances interdiffusion and results in PL blueshifts in excess of 300 meV.

show abstract

Optical properties of submonolayer InAs/InP quantum dots on vicinal surfaces

Cited by 12 publications

References 18 publications

Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing

Effects of grown-in defects on interdiffusion dynamics in InAs∕InP(001) quantum dots subjected to rapid thermal annealing

Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm

Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots by rapid thermal annealing

Contact Info

Product

Resources

About