1970
DOI: 10.4314/stech.v4i1.5
|View full text |Cite
|
Sign up to set email alerts
|

Optical Properties of Silver Aluminium Sulphide Ternary Thin Films Deposited by Chemical Bath Method

Abstract: Ternary thin films of Silver Aluminium Sulphide (AgAlS 2) have been prepared by chemical bath deposition techniques. Aqueous solution of 41.5 mls containing AgNO 3 , Al 2 (SO 4) 3 , thiourea and EDTA was used, where AgNO 3 , Al 2 (SO 4) 3 , thiourea were the source of Ag + , Al + and Srespectively and EDTA was used as a complexing agent. NaOH served as pH adjuster. The films were deposited at 300K of temperature. The deposited film properties were studied using a Janway UV-VIS spectrophotometer. From the spect… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2020
2020
2022
2022

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 5 publications
0
2
0
Order By: Relevance
“…This low value of the estimated reflectance is according to Uhuegbu et al [10] and Ezenwa and Okoli [15] for copper zinc sulphide thin films. The low reflective properties of the samples make the films good material for anti-reflective coatings [17]. The optical band gap (Eg) of the deposited films was estimated from Eq.…”
Section: Resultsmentioning
confidence: 99%
“…This low value of the estimated reflectance is according to Uhuegbu et al [10] and Ezenwa and Okoli [15] for copper zinc sulphide thin films. The low reflective properties of the samples make the films good material for anti-reflective coatings [17]. The optical band gap (Eg) of the deposited films was estimated from Eq.…”
Section: Resultsmentioning
confidence: 99%
“…AgAlS 2 films have been produced using silver nitrate, aluminium sulphate, thiourea and EDTA (complexing agent). Film thickness increased from 0.03 µm to 0.52 µm in longer deposition time [59]. The obtained band gap values are in the range of 2.15 to 2.4 eV.…”
Section: Figure 1: Atomic Layer Deposition Techniquementioning
confidence: 77%