Optical properties of self-assembled InAs quantum dots based P–I–N structures grown on GaAs and Si substrates by Molecular Beam Epitaxy

Effects of gamma radiation on the electrical properties of InAs/InGaAs quantum dot-based laser structures grown on GaAs and Si substrates by molecular beam epitaxy

“…In this work, the samples investigated are p–i–n laser diodes with InAs self-assembled quantum dots (QDs) incorporated in the i-region. The samples were fabricated using the same technique as reported in ref. 11 and 12.…”