“…In the study by Asghari-Paskiabi et al, the band at about 620 cm −1 was attributed to the occurrence of CdSe quantum dots [ 11 ]. It has been confirmed in the literature that bands in the range of 240–280 cm −1 correspond to stretching Se—Se bonds, and Se—S bonds exhibit an oscillation band in the range of 320–390 cm −1 [ 34 , 35 ] . Fig.…”
“…In the study by Asghari-Paskiabi et al, the band at about 620 cm −1 was attributed to the occurrence of CdSe quantum dots [ 11 ]. It has been confirmed in the literature that bands in the range of 240–280 cm −1 correspond to stretching Se—Se bonds, and Se—S bonds exhibit an oscillation band in the range of 320–390 cm −1 [ 34 , 35 ] . Fig.…”
“…It however decreases with an increase in deposition time up to 70 s and started to increase slowly as the time of deposition increased further. The reflectance (R) of the films was obtained from the relation as given by [21].…”
The properties of PbMnS semiconductor thin films deposited on fluorine-doped tin oxide (FTO) substrate using an electrodeposition method are investigated to determine their possible device applications. Lead acetate, manganese sulfate, and thiourea were used as precursors for sources of lead, manganese, and sulfur ions respectively. The concentration of lead, manganese, and sulfur ions sources with deposition voltage of 1.8 V was kept constant. The films were deposited using three electrodes system of electrodeposition method by varying deposition time. The films were characterized for optical, structural, morphological, and compositional properties and results showed that the absorbance, refractive index, and optical conductivity of the films are high in the visible (VIS) and near-infrared (NIR) regions but decreases in the NIR. These three properties initially increased with an increase in deposition time up to a time of 70 s which has the highest values of these properties before decreasing to lower values. The transmittance and extinction coefficient of the films are low in both VIS and NIR regions. The bandgap energy of PbS was found to be blue shifted with values of 1.51 eV, 1.54 eV, 1.60 eV, 1.45 eV, and 1.35 eV for the films deposited at 30 s, 50 s, 70 s, 90 s, and 110 s respectively. XRD analysis showed that the films are crystalline with sharp peaks positions indexable to crystalline planes of (111), (200), (211), (220), (311) and (400) with average crystallite size in the range of 16.110 nm to 17.218 nm. Energy-dispersive X-ray spectroscopy (EDX) results showed that the films are composed of lead, manganese, and sulfur but there are some impurity elements present mostly as a result of the substrate used. These properties exhibited by the deposited thin films of PbMnS showed that they can be used for many optoelectronic applications such as photovoltaic cells, sensors, photoconductors, etc.
“…It is noticeable that the increment in film thickness improves the n values of the fabricated CATS 4 layers. This performance may be related to enhanced R values by expanding the layer thickness [50][51][52].…”
The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.
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