Optical Properties of RF Sputtered Samarium Oxide Thin Films

Abstract

This paper reports the optical properties of prepared samarium oxide Sm2O3 thin films nanoparticles using RF sputtering technique. X-ray diffraction is used to examine and characterize the prepared films. Optical measurements are carried out by employing U-V-Visible spectroscopy to study optoelectronic properties of Sm2O3 thin films. These films are highly transparent in the visible range. The average value of the optical gap belonging to the thin films deposited under different pressure of the gas is 4.33 eV. The refractive index (n) behaves as normal dispersion and decreases with increasing the pressure of the gas. The dispersion energy and single oscillator energy increase with increasing the pressure of the gas whereas the optical conductivity decreases with increasing the power on Sb target.

Effect of V2O5 concentration on structural and optical properties of WO3 thin films prepared by RF magnetron sputtering

“…It can be noticed that the peaks of the transmittance were slightly shifted toward the longer wavelength with the increasing doping concentration. The loss of transmittance observed at longer wavelengths are due to the photon -electron interaction [5].…”

“…This is given in equation (5). ( 5 ) where λ o is the average oscillator parameter and S o is the average oscillator strength. The plot of (n 2 − 1) −1 as a function of λ −2 is shown in Fig.8 and the values of 1/S o and 1/λ 2 o S o can be evaluated from the slope and the intercept, respectively.…”

A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures

“…Therefore, research has diverted into an alternative passivation layer that possesses a high dielectric constant (k) value as well as a wide band gap among other requirements to meet market demand. Numerous high k materials that were investigated as the probable contenders for replacing SiO 2 as the passivation layer for MOS devices included hafnium oxide (HfO 2 ), cerium oxide (CeO 2 ), zirconium oxide (ZrO 2 ), lanthanum oxide (La 2 O 3 ), gallium oxide (Ga 2 O 3 ), and samarium oxide (Sm 2 O 3 ) [4][5][6][7][8][9]. Among the probable candidates, CeO 2 is the most likely candidate to be used as the high k passivation layer for Si-based MOS devices because of its excellent qualities, such as its wide bandgap (6 eV) and k value of 26 as well as high dielectric strength (25 MV cm −1 ), low lattice mismatch with Si, and high refractive index (2.2-2.8) [10][11][12][13][14].…”