Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

Ouerghui, W.; Gassoumi, M.; Béji, Lotfi; Maaref, M.A.

doi:10.1016/j.physe.2021.114733

Cited by 10 publications

(3 citation statements)

References 33 publications

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“…It can be seen that ( )curves present an important value in low energy region and remarkable reduction in high energy region. To analyze the refractive index at lower optical frequencies one can use the Wemple -DiDomenico (WDD) single-oscillator model [52] which is the most applied concept for the chalcogenide semiconductors. The (WDD) model is given by the following expression:…”

Section: Linear Optical Propertiesmentioning

confidence: 99%

“…here, 0 and are the dispersion energy parameters, h is Planck's constant and hν is the photon energy. The dispersion energy corresponds to the dispersion of the electronic dielectric function related to the interband transition force, while 0 is the single oscillator energy connected with the optical energy gap called WDD band gap [52]. The dispersion parameters for 2 3 and 2 2.75 0.25 were estimated by fitting the plot ( 2 − 1) −1 versus (ℎ ) 2 in low energy region as shown in Fig.…”

Section: Linear Optical Propertiesmentioning

confidence: 99%

“…The optical non-linearity of materials is directly related to the control of the light in optical switching devices. In the present work, the nonlinear optical properties (NLO) were studied from the calculation of the 3rd order nonlinear optical susceptibility χ (3) and the non-linear refractive index n2 for 2 3 and 2 2.75 0.25 within the Miller's rule and the static refractive index (0) [52]. It is known that the non-linearity occurs when the electromagnetic field becomes high enough.…”

Section: Non-linear Optical Parametersmentioning

confidence: 99%

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Spin-orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the Ternary Bismuth Sulfide Bi2S2.75Se0.25: Ab-initio calculations

Abdallah¹,

Ouerghui²

2021

Preprint

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Although the relevant properties of the bismuthinite \({Bi}_{2}{S}_{3}\), it was recently approved that the substitution of Se atoms in the \({Bi}_{2}{S}_{3}\) lattice can significantly enhance its electro-optical properties. In the present work, a detailed study on the structural, electronic and optical properties of \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\) has been carried out based on first principle calculations. The simultaneous effect of Se-doping and spin-orbit coupling (SOC) on bismuth sulfide \({Bi}_{2}{S}_{3}\) was investigated. Our calculations show that \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\) exhibits a narrow direct band gap of 1.062 eV after inclusion of the (SOC). The calculation of the carrier effective masses indicates that \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\) may possess a high electron mobility material which is in accordance with experimental studies. The linear absorption optical spectra for both \({Bi}_{2}{S}_{3}\) and \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\)show that doping bismuthinite with (Se) increases the optical absorption coefficient in the visible range and takes a value up to \(10 {10}^{5}{cm}^{-1}\). In addition, the dielectric function, optical conductivity and the energy loss function of \({Bi}_{2}{S}_{3}\) and \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\)were also derived. The addition of the (Se) content induces a red shift in agreement with experimental studies. A noticeable effect of the (SOC) on the linear optical parameters was observed. The stability of the excitons was also studied by the estimation of the binding energy value. The dispersion energy parameters of \({Bi}_{2}{S}_{3}\) and \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\)were estimated using a single oscillator model. Some nonlinearities have been computed with and without inclusion of (SOC) showing that \({Bi}_{2}{S}_{2.75}{Se}_{0.25}\)with large nonlinear optical parameters is promising candidate in photonic switching applications.

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Section: Linear Optical Propertiesmentioning

confidence: 99%

Section: Linear Optical Propertiesmentioning

confidence: 99%

Section: Non-linear Optical Parametersmentioning

confidence: 99%

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Spin-orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the Ternary Bismuth Sulfide Bi2S2.75Se0.25: Ab-initio calculations

Abdallah¹,

Ouerghui²

2021

Preprint

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Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

Abdallah

Ouerghui

2021

Opt Quant Electron

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Although the relevant properties of the bismuthinite 𝐵𝑖 2 𝑆 3 , it was recently approved that the substitution of Se atoms in the 𝐵𝑖 2 𝑆 3 lattice can significantly enhance its electro-optical properties.In the present work, a detailed study on the structural, electronic and optical properties of 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 has been carried out based on first principle calculations. The simultaneous effect of Se-doping and spin-orbit coupling (SOC) on bismuth sulfide 𝐵𝑖 2 𝑆 3 was investigated. Our calculations show that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 exhibits a narrow direct band gap of 1.062 eV after inclusion of the (SOC). The calculation of the carrier effective masses indicates that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 may possess a high electron mobility material which is in accordance with experimental studies. The linear absorption optical spectra for both 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 show that doping bismuthinite with (Se) increases the optical absorption coefficient in the visible range and takes a value up to 10 10 5 𝑐𝑚 −1 . In addition, the dielectric function, optical conductivity and the energy loss function of 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 were also derived. The addition of the (Se) content induces a red shift in agreement with experimental studies. A noticeable effect of the (SOC) on the linear optical parameters was observed. The stability of the excitons was also studied by the estimation of the binding energy value. The dispersion energy parameters of 𝐵𝑖 2 𝑆 3 and 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 were estimated using a single oscillator model. Some nonlinearities have been computed with and without inclusion of (SOC) showing that 𝐵𝑖 2 𝑆 2.75 𝑆𝑒 0.25 with large nonlinear optical parameters is promising candidate in photonic switching applications.

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Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy2O3 nano-layer processed by electron beam evaporation on n-GaAs substrate

Ouerghui,

Saghrouni,

Beji

2023

Opt Quant Electron

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Optical properties of quaternary GaMnAsP thin layer grown by molecular beam epitaxy

Cited by 10 publications

References 33 publications

Spin-orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the Ternary Bismuth Sulfide Bi2S2.75Se0.25: Ab-initio calculations

Spin-orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the Ternary Bismuth Sulfide Bi2S2.75Se0.25: Ab-initio calculations

Spin–orbit coupling effect on electronic, linear and nonlinear optical properties of Bi2S3 and the ternary bismuth sulfide Bi2S2.75Se0.25: Ab-initio calculations

Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy2O3 nano-layer processed by electron beam evaporation on n-GaAs substrate

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