Optical properties of pyrolytic boron nitride in the energy range 0.05—10 eV

Hoffman, D. M.; Doll, Gary L.; Eklund, P. C.

doi:10.1103/physrevb.30.6051

Cited by 269 publications

(177 citation statements)

References 24 publications

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“…The dominant peak near 1366 cm -1 that shows up intensely in all three samples is attributed to the wellknown zone-center, counter-phase B-N vibrational mode (E 2g ) within BN sheets [4,9]. As shown in the inset of Fig.…”

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confidence: 84%

“…A broad peak appears at 920 cm -1 for all three samples. Since in perfect h-BN crystal, the only other Raman active mode (in-phase E 2g mode) is located far away (near 50 cm -1 ) [4], this peak at 920 cm -1 is probably due to disorder-induced Raman activity or contamination. A sharp peak is observed near 880cm -1 for the B x C y N z and BN NTs.…”

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confidence: 99%

“…A wide range of lowest gap energies, such as 3.8 eV [2], 4.3 eV [3], 5.2 eV [4] and 5.9 eV [5], have been reported by experimental studies using various techniques.…”

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Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes

et al. 2004

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RECEIVED DATE ( )We report Raman and time-resolved photoluminescence spectroscopic studies of multiwalled BN and B x C y N z nanotubes. The Raman spectroscopy shows that the as-grown B x C y N z nanotubes are radially phase separated into BN shells and carbon shells. The photoluminescence decay process is characterized by two time constants that are attributed to intra-and inter-BN sheet charge recombination, respectively. Comparison of the photoluminescence of BN nanotubes to that of hexagonal BN is consistent with the existence of a spatially indirect band gap in multi-walled BN nanotubes as predicted by theory.Hexagonal boron nitride (h-BN) is iso-structural with graphite and is the normal phase of BN that is stable at room temperature and ambient pressure. It is a wide band gap semiconductor with potential applications in optoelectronic devices. First-principles local-density calculations have shown that the lowest band gap (4.07 eV) is indirect, located near the Brillouin-zone edges. However, due to the quasitwo dimensional nature of the hexagonal structure, the lowest direct band gap is predicted to be close by

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Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes

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“…These values are larger than that (5.2À5.4 eV) of bulk h-BN. 33,34 The dependence of OBG on the number of layers indicates that interlayer interaction plays an important role in the electronic structure of h-BN, which can increase the dispersion of the electronic bands and consequently reduce the band gap. 33 The OBG obtained for monolayer h-BN is consistent with that (6.07 eV) of the monolayer grown on Cu 24 and close to that predicted by theoretical calculations (6.0 eV).…”

Section: Articlementioning

confidence: 99%

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils

et al. 2013

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Atomically thin hexagonal boron nitride (h-BN), as a graphene analogue, has attracted increasing interest because of many fascinating properties and a wide range of potential applications.However, it still remains a great challenge to synthesize high-quality h-BN with predetermined number of layers at a low cost. Here we reported the controlled growth of h-BN on polycrystalline Pt foils by low-cost ambient pressure chemical vapor deposition with ammonia borane as the precursor. Monolayer, bilayer and few-layer h-BN domains and large-area films were selectively obtained on Pt by simply changing the concentration of ammonia borane. Moreover, using a bubbling method, we have achieved the nondestructive transfer of h-BN from Pt to arbitrary substrates and the repeated use of the Pt for h-BN growth, which not only reduces environmental pollution but also decreases the production cost of h-BN. The monolayer and bilayer h-BN obtained are very uniform with high quality and smooth surfaces. In addition, we found that the optical band gap of h-BN increases with decreasing number of layers. The repeated growth of large-area, high-quality monolayer and bilayer h-BN films, together with the successful growth of graphene, opens up the possibility for creating various functional heterostructures for large-scale fabrication and integration of novel electronics.

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“…1 Raman spectroscopy and IRS were applied to study the infrared optical properties of amorphous ͑a-BN͒, turbostratic ͑t-BN͒, c-BN, and h-BN. [8][9][10][11] Polarized IRS data are sensitive to the thin-film phase composition as demonstrated recently. 11 However, the h-BN microstructure particularly affects the sample reflectivity behavior as well.…”

Section: Introductionmentioning

confidence: 99%

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

et al. 1997

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Schubert, Mathias; Rheinlander, B.; Franke, E.; Neumann, H.; Tiwald, T. E.; and Woollam, John A., "Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example" (1997 We present a microstructure-dependent anisotropic infrared-optical dielectric function model for mixedphase polycrystalline material from which we derive the transverse and longitudinal-optical modes observable in thin films. Infrared ellipsometry over the wavelength range from 700 to 3000 cm Ϫ1 is then used to determine the phase and microstructure of polycrystalline and multilayered hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto ͑100͒ silicon. The ellipsometric data depend on the thin-film multilayer structure, the layer-phase composition, and the average orientation of the hexagonal grain c axes. In particular, we demonstrate the existence of spectral shifts of longitudinal optical phonons as a function of microstructure, i.e., the average grain crystallographic orientation within the mixed-phase material. ͓S0163-1829͑97͒08244-1͔

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Optical properties of pyrolytic boron nitride in the energy range 0.05—10 eV

Cited by 269 publications

References 24 publications

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

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Optical properties of pyrolytic boron nitride in the energy range 0.05—10 eV

Cited by 269 publications

References 24 publications

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNz Nanotubes

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNz Nanotubes

Repeated and Controlled Growth of Monolayer, Bilayer and Few-Layer Hexagonal Boron Nitride on Pt Foils

Infrared optical properties of mixed-phase thin films studied by spectroscopic ellipsometry using boron nitride as an example

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Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes

Raman Spectroscopy and Time-Resolved Photoluminescence of BN and B_xC_yN_z Nanotubes