Optical properties of porous GaAs formed by low energy ion implantation

Garrido-Hernández, Aristeo; Kudriavtsev, Yuriy; Salinas-Fuentes, Cecilia; Hernández-Gutiérrez, C.A.; Asomoza, R.

doi:10.1016/j.vacuum.2019.108976

Cited by 15 publications

(6 citation statements)

References 29 publications

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“…The reason for the high photocurrent, Ip exhibited in the porous structure compared to the non-porous structure was associated with the porous structure that has higher surface area to volume ratio and more area was exposed to the light [4]. On top of that, the light reflectance of the porous structure was lower in comparison to the non-porous structure, thus, there is high absorbance of photon by the porous structure when light was illuminated on the device's active area [13]. Therefore, the porous structure gave a significant effect on the performance of the photodetector device.…”

Section: Resultsmentioning

confidence: 99%

“…Meanwhile, the pore width and the distance between pores for all the porous structures were kept constant at 1 μm. The parameters which include the pore depth and width of the porous structure used in the present work were referred to a reported article from [13]. Next, the Aluminum (Al) Schottky contact was deposited on top of the non-porous and porous GaAs surfaces as anode and cathode electrodes.…”

Section: Methodsmentioning

confidence: 99%

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Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

Ramle,

Radzali,

Abd Rahim

et al. 2023

KEM

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In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with different pore depth were designed and simulated to investigate the effect of pore depth on the optical and electrical properties of GaAs semiconductor. The pore depth of porous GaAs structure was varied with 2, 4, 6 and 8 μm. The porous GaAs structures were then tested for the metal-semiconductor-metal (MSM) photodetector device application. The non-porous and porous GaAs MSM photodetectors were compared systematically through current-voltage (I-V) characteristics, current gain, and spectral response. The result showed that the porous GaAs MSM photodetector has better performance in terms of electrical and optical properties than the non-porous photodetector. Amongst the MSM GaAs photodetectors, the porous GaAs photodetector with pore depth of 6 μm obtained the highest current gain value of 3.22. While for optical properties, the spectral response showed the current intensity of 11.370 µA which was recorded at the peak wavelength of 880 nm. Therefore, porous GaAs showed good potential and can be used for optoelectronic device applications such as MSM photodetector.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

Ramle,

Radzali,

Abd Rahim

et al. 2023

KEM

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show abstract

“…[27,28,[36][37][38] However, these methods bring about some inevitable disadvantages, such as uncontrollability, degraded performance, complicated process, harsh doping conditions, and difficulty in large-area preparation.Ion implantation technology has been generally used in industrial semiconductor applications. [39][40][41][42][43] By this method, any elements can be directly implanted into the sample regardless of the solid solubility. [40,43,44] This process is pure and highly repeatable.…”

mentioning

confidence: 99%

“…[40,41,44] Moreover, The implanted ions cannot accurately stay in atomically thin 2D materials due to their high energy. [40,42] Lowering the implantation energy may be an executable way to calm down the doping atoms, but it will cause severe surface etching. [45] Therefore, it is difficult to modify thin-layer 2D materials directly by ion implantation technology.…”

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confidence: 99%

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A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS₂ by Ion Implantation

Chen

Pei

Liu

et al. 2022

Adv Elect Materials

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Molybdenum disulfide (MoS2) is a promising 2D semiconductor material for its unique characteristics such as tunable bandgap, high electrical conductivity, and strong light–matter interaction. Presently, many efforts have been made to modulate its properties, such as surface engineering, strain introduction, doping, and so on. Recently, it has been proved that substitutional metal doping is an effective approach to tune the energy bandgap of the aimed material and improve the performance of the device. Conventional metal doping methods will inevitably introduce impurities or defects and cannot control doping regions. Ion implantation is widely used in traditional semiconductor modification processes due to its high efficiency, controllability, and homogeneity. But it is rarely applied to 2D materials because of the damage caused during the implantation process. Here, the SiO2 substrate is implanted by tungsten ion implantation and then the tungsten doping of MoS2 is successfully achieved by chemical vapor deposition (CVD) growth process, while avoiding direct implantation damage to it. The W‐doped MoS2 photodetectors show a high‐speed response with a rise/fall time of 210 ms/160 ms. This work provides a novel doping strategy for metal doping of 2D materials and opens a new avenue to modify 2D materials properties.

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Study of the Effect of Low-Energy Irradiation with O2+ Ions on Radiation Hardening and Modification of the Properties of Thin TiO2 Films

Kozlovskiy

Shlimas

Kenzhina

et al. 2020

J Inorg Organomet Polym

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Optical properties of porous GaAs formed by low energy ion implantation

Cited by 15 publications

References 29 publications

Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS₂ by Ion Implantation

Study of the Effect of Low-Energy Irradiation with O2+ Ions on Radiation Hardening and Modification of the Properties of Thin TiO2 Films

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Optical properties of porous GaAs formed by low energy ion implantation

Cited by 15 publications

References 29 publications

Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth

A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS2 by Ion Implantation

Study of the Effect of Low-Energy Irradiation with O2+ Ions on Radiation Hardening and Modification of the Properties of Thin TiO2 Films

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Product

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A High‐Speed Photodetector Fabricated with Tungsten‐Doped MoS₂ by Ion Implantation