Optical properties of PbTe doped with Nd

Enhancement of electrical transport through the anisotropic nanostructure performance of heavily Yb-doped PbSe0.2Te0.8 thin films

“…With increasing Yb content, the Fermi energy and the free electron density grow until the Fermi level reaches the impurity state level, after which no further increase in the electron density in the conduction band is evident, and the Fermi energy is pinned at DE 1 (low-temperature region) for x ¼ 0.015e0.105. On the other hand, with increasing temperature at 413 Ke423 K, the impurity states lead to sink into the band gap, whereas the narrow width of the density-of-states of resonance states ensures a very strict pinning of the Fermi level relative to the conduction band edge, despite the inevitably non-uniform distribution of impurities and electrically active defects throughout the sample [26,27]. At DE 2 (high-temperature region), ln s intrinsic conduction dominates due to the increase in the mobility of the carriers and the reduction of the trapping state and potential barriers [28].…”

LnxPb1−xTe(Ln:Nd3+,Yb3+) nanomaterials: Synthesis, characterization, physical properties, and optical properties

“…ZT is given by ZT = S 2 T/rk, where S, r, T, and k are the Seebeck coefficient, electrical resistivity, absolute temperature, and thermal conductivity, respectively [8][9][10]. Therefore, it is necessary to maximize the value of ZT in order to large Seebeck coefficient, low electrical resistivity, and low thermal conductivity of the PbTe material [11].…”