Optical properties of non-stoichiometric tin oxide films obtained by reactive sputtering

Electrical conductivity, Seebeck coefficient and optical properties of SnO2 film deposited on ITO by dip coating

“…This difference in band gap of the SnO 2 film can result from the presence of non-stoichiometry of the deposited layers. It is well known that the optical band gap of the SnO 2 film varies from 3.4 to 4.6 eV [33][34][35].…”

Electrochromism in lithiated Sn oxide: Mössbauer spectroscopy data on valence state changes

“…44 Sn oxide is well suited for Mössbauer work, and a number of studies on vacuum deposited films have reported valence state changes due to nonstoichiometry. [45][46][47][48][49][50][51][52][53][54][55][56] The technique has been applied to Li ϩ -conducting Sn-In sulphide spinels for solid state batteries. 57 Considering the importance of Sn oxide in solid state ionics, we believe that a detailed study using the Mössbauer effect is well justified for this material.…”

Synthesis and Characterization of Tin Oxide: A Review

“…The obtained results reflect that the excess tin atoms locate in interstitial positions of the tetrahedral crystal. The influence of substrate temperature on the properties of SnO 2 films deposited by ultrasonic spray pyrolysis method was reported by Achour et al [33]. The average crystallite sizes and band gap energies were increased from 6.52 to 29.8 nm, and 4.03-4.133 eV, respectively with increasing substrate temperature from 400 to 500 °C.…”