Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source

Shang, Xunzhong; Guo, Liping; Wu, Shuang; Niu, Pingjuan; Huang, Qi; Zhou, Jian

doi:10.1016/j.jcrysgro.2003.10.006

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2005

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the composition at which the crossover occurs is hard to determine. It is because of its proximity and because of the presence of the long-range ordering effect in In x Ga 1Àx P. A low-temperature band gap energy of 2.018 eV was reported for fully disordered InGaP lattice matched to GaAs [1]. Although the highest theoretically proposed value of the ordering-induced band gap reduction is about 470 meV, the real experimental value is in the range of 100 meV.…”

Section: Introductionmentioning

confidence: 98%