Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells

The Density of States of the Two Dimensional Electron Gas in InAs/AlSb Quantum Well

“…For QW width L=15nm, can be found following eigenvalues: E 1 =0.0459eV, E 2 =0.156eV, E 3 =0.295eV, and for L=6nm can be found: E 1 =0.165eV, E 2 =0.492eV, E 3 =0.853eV. Now it is possible the comparison of subband dispersion, obtained by the equation (8) and by the approximation (10). Graphical comparisons are shown in Figure 1a, b for the width of the QWs 6nm and 15nm.…”

“…Graphical comparisons are shown in Figure 1a, b for the width of the QWs 6nm and 15nm. The solid lines are derived from (8) and dashed are from the approximation (10). The graphic shows that the approximation (10) is quite exact in a wide range of values of L. DOS values determined from experiment (see Table 1) are represented by triangular symbols.…”

“…From investigations [5,[8][9][10][11] follows, that in the QW hetero structure based on narrow-gap semiconductors as the InAs/AlSb or InAsSb/AlSb transport effective mass of an electron in the QW ( ) c F m E strongly depends Fermi energy, however, on the Fermi level, it is weakly dependent on the number of subband i. Only under this condition, formula (4) can be written as…”

Effect of subband nonparabolicity on optical properties of InSbAs/AlSb deep quantum well heterostructures

“…The radiative recombination rate of quantum wells for non-degenerated electrons can be calculated using the following formula [7]:…”

“…is an effective density of states in the valence band, n and p are the carrier concentrations, and ε j is the distance between the subband j and ground level in the valence band. The radiative recombination time is presented by the following equation [7]:…”