Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.