Optical properties of Ge–Sb–Te chalcogenides

Ju, Tong; Viner, J. M.; Li, Heng; Taylor, P. C.

doi:10.1016/j.jnoncrysol.2007.10.088

Cited by 14 publications

(3 citation statements)

References 6 publications

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“…Values for some glasses are found in reasonable agreement with those available in literature (e.g., Ge 2 Sb 2 Te 5ð7Þ and Ge 2 As 2 Se 5ð7Þ ). 5,11,12) Figure 4 represents imaginary part of the dielectric function of the glasses calculated from ellipsometric data. The Lorentz-Tauc dispersion model was utilized to fit the experimental data for samples where interference fringes were observed.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films

Mammadov

Shim

Sakamoto

et al. 2011

Jpn. J. Appl. Phys.

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We compare optical parameters of Ge2As(Sb)2Se(Te) x (x = 5, 7) glassy films. Optical gap obtained from transmission and reflection measurements decreases in the sequence Ge–As–Se → Ge–Sb–Se → Ge–As–Te → Ge–Sb–Te similarly to decreasing glass-forming ability of bulk systems. We have found from spectroscopic ellipsometry measurements that spectral dependence of imaginary part of the dielectric function shifts to lower energies in the same sequence. This indicates to strong correlation between structural arrangement of atoms in these ternaries and their electronic properties. Ge2Sb2Se5 crystallizes upon thermal annealing with accompanying change in reflectivity. No change in the structure of Ge2As2Se5 is found after annealing.

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Section: Resultsmentioning

confidence: 99%

Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films

Mammadov

Shim

Sakamoto

et al. 2011

Jpn. J. Appl. Phys.

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“…The significant difference between these states in electrical and optical properties upon the reversible switching allows storing the rewritable digital bit information [8][9][10]. With developments in lithography and discoveries in chalcogenide compounds, recently GST emerged as an important candidate for the electronic nonvolatile memory devices [10][11][12][13][14]. Many binary compounds can be synthesized by associating one of the chalcogene with another element of the periodic table like, indium, antimony, copper and silicon, etc [15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Investigations of crystallization kinetics and phase transformation of 1000 nm of Ge20Sb20Te60 thin film from electrical measurements

Shaaban¹,

Elsaeedy²,

Mahmoud³

et al. 2021

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In this work we will focus first on obtain the sheet resistance, Rs of thin film whose surface thickness is equal to 1000 nm for the chalcogine Ge20Sb20Te60 at different heating rates , this is done against temperature in the range from 70 to 370 °C. The sheet resistance curve and through derivation of sheet resistance as a function of temperature there was clearly evidence of two crystallization regions for the studied sample. Second, the thermal data we obtained was used to complete the thermal calculations and then the electrical calculations thereafter. The activation energies of crystallization were evaluated by kinetic criteria. The activation energy, Ec , and Avrami index, n, were obtained by analyzing the data via JMA methods. The results indicated that the transformation from amorphous to crystalline phases. The crystalline phases for the as-deposited and annealed film were identified via x-ray diffraction (XRD).

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“…These materials appear a continuous alteration in many physical properties with alteration in chemical composition [5]. Many investigations of the electrical properties [6,7], photo-conductivity [8], glass formation [9], study of structure [10] and analysis of crystallization kinetics [11][12][13] of the glassy (As-Se-Sb) system have been made. To our knowledge, less detailed investigations have been performed on their optical properties.…”

Section: Introductionmentioning

confidence: 99%

RESISTIVITY-TEMPERATURE DEPENDENCE, THERMAL AND ELECTRICAL PARAMETERS OF Se65-xAs35Sbx THIN FILMS: (1µm, 5 K.min-1 )

GADALLA¹,

SHAABAN²,

ANAS³

et al. 2020

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Sheet resistance, Rs , measurements for the (Se65-xAs35Sbx thin films with (0 ≤ x ≥ 10) at. %) with thickness film 1000 nm and heating rate, 5 K/min has been explained in this work. Measurements of the sheet resistance used to compute the thermal and electrical parameters in the temperature range from 300 to 665 K. In the sheet resistance curves, two main regions have been considered clearly evidence of one crystallization region for the studied films. The activation energy, Ec , of crystallization and Avrami index, n, were estimated. The change of activation energy with volume of crystalline fraction has been deduced. The electrical results of the studied films appear two types of conduction channels which contribute two conduction mechanisms in crystallized region. The activation energies ΔE, two pre-exponential factors 0  , *  0 and other parameters has been computed in both of the extended and hopping states regions. The crystalline phases for the as-deposited and annealed films were identified using by x-ray diffraction (XRD).

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Optical properties of Ge–Sb–Te chalcogenides

Cited by 14 publications

References 6 publications

Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films

Comparison of Optical Parameters of Ge–As(Sb)–Se(Te) Glassy Films

Investigations of crystallization kinetics and phase transformation of 1000 nm of Ge20Sb20Te60 thin film from electrical measurements

RESISTIVITY-TEMPERATURE DEPENDENCE, THERMAL AND ELECTRICAL PARAMETERS OF Se65-xAs35Sbx THIN FILMS: (1µm, 5 K.min-1 )

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