Optical properties of GaSe, characterization and simulation

Bassou, A.; Rajira, A.; Kanouny, A. El; Abounadi, A.; Haskouri, Jamal El; Almaggoussi, A.

doi:10.1016/j.matpr.2020.07.622

Cited by 8 publications

(3 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The absorption coefficient (α) of radiation with wavelength λ, in both specially undoped and 3.00 at. % Eu-doped ε-GaSe single crystals, was determined from measurements of the transmittance (t) and Fresnel reflection coefficient (R) of the sample surface using the relation [41]:…”

Section: Resultsmentioning

confidence: 99%

“…As can be seen from Figure 8b,h, in the case of near-infrared (NIR) PL band of single crystalline GaSe:Eu (0.02 at %) plates, the interference fringes covering the wavelength ranging from 690 nm up to ~950 nm are well emphasized. The size of the FP cavities can be determined from measurements of the wavelengths λ 1 and λ 2 for two consecutive maxima/minima (Figure 8h) and of the average refractive index (n) over this wavelength range, using the equation [41]:…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

Sprincean,

Qiu,

Tjardts

et al. 2024

Materials

View full text Add to dashboard Cite

This work studies the technological preparation conditions, morphology, structural characteristics and elemental composition, and optical and photoluminescent properties of GaSe single crystals and Eu-doped β–Ga2O3 nanoformations on ε–GaSe:Eu single crystal substrate, obtained by heat treatment at 750–900 °C, with a duration from 30 min to 12 h, in water vapor-enriched atmosphere, of GaSe plates doped with 0.02–3.00 at. % Eu. The defects on the (0001) surface of GaSe:Eu plates serve as nucleation centers of β–Ga2O3:Eu crystallites. For 0.02 at. % Eu doping, the fundamental absorption edge of GaSe:Eu crystals at room temperature is formed by n = 1 direct excitons, while at 3.00 at. % doping, Eu completely shields the electron–hole bonds. The band gap of nanostructured β–Ga2O3:Eu layer, determined from diffuse reflectance spectra, depends on the dopant concentration and ranges from 4.64 eV to 4.87 eV, for 3.00 and 0.05 at. % doping, respectively. At 0.02 at. % doping level, the PL spectrum of ε–GaSe:Eu single crystals consists of the n = 1 exciton band, together with the impurity band with a maximum intensity at 800 nm. Fabry–Perrot cavities with a width of 9.3 μm are formed in these single crystals, which determine the interference structure of the impurity PL band. At 1.00–3.00 at. % Eu concentrations, the PL spectra of GaSe:Eu single crystals and β–Ga2O3:Eu nanowire/nanolamellae layers are determined by electronic transitions of Eu2+ and Eu3+ ions.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

Sprincean,

Qiu,

Tjardts

et al. 2024

Materials

View full text Add to dashboard Cite

show abstract

“…The appropriate buffer layer material can smooth the interface defects, adjust the energy z E-mail: wjcfd2002@163.com ECS Journal of Solid State Science and Technology, 2022 11 113004 band arrangement, protect the surface of the absorber layer, increase the width of the battery depletion zone, reduce the tunnel effect and improve the contact barrier. 36 The performance of CZTS solar cells with CdS as a buffer layer has been significantly improved. It is optical photovoltaic property, which has been achieved with an efficiency of 19.64% (with J sc = 24.22 mA cm −2 , V oc = 0.9489 V and FF = 86.13%).…”

mentioning

confidence: 99%

Numerical Simulations on CZTSSe-Based Solar Cells with GaSe as an Alternative Buffer Layer Using SCAPS-1D

Wu¹,

Hao²,

Wei³

et al. 2022

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

In recent years, because of non-toxic characteristic, relatively high efficiency, and adjustable band gap, the research on thin film solar cells using Cu2ZnSn (SxSe1-x)4 (CZTSSe) as the absorber layer material has been in full swing. But its large band gap width makes it easy to form an excessive potential barrier with other materials, leading to the raise of the recombination probability of carriers. Therefore, it is necessary to select a suitable buffer layer to optimize such solar cells. Compared with the common buffer material CdS, GaSe crystal has a high damage threshold, strong anisotropy, and nonlinear optical properties. In this paper, GaSe was selected as the buffer layer of the solar cell with CZTSSe as the absorber layer. At the same time, traditional holes transport layer was removed to save its complex manufacturing process. The addition of GaSe also adjusted the energy band arrangement of the battery, which alleviated the strong potential barrier between the absorber layer and the window layer to improve the carrier transport effectively. The effects of the impurity ratio, thickness, temperature, and defect density on the device performance were also discussed in detail, which provides a reference for experimental preparation and industrial application.

show abstract

Structural, electronic, and elastic properties of different polytypes of GaSe lamellar materials under compressive stress: insights from a DFT study

et al. 2022

View full text Add to dashboard Cite

Optical properties of GaSe, characterization and simulation

Cited by 8 publications

References 24 publications

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

Composition and Surface Optical Properties of GaSe:Eu Crystals before and after Heat Treatment

Numerical Simulations on CZTSSe-Based Solar Cells with GaSe as an Alternative Buffer Layer Using SCAPS-1D

Structural, electronic, and elastic properties of different polytypes of GaSe lamellar materials under compressive stress: insights from a DFT study

Contact Info

Product

Resources

About