Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Hamdani, F.; Botchkarev, A.; Kim, Wonsuck; Morkoç̌, H.; Yeadon, M.; Gibson, J. M.; Tsen, S. C Y; Smith, David J.; Reynolds, D. C.; Evans, K. R.; Litton, C. W.; Mitchel, W. C.; Hemenger, P. M.

doi:10.1063/1.118183

Cited by 108 publications

(35 citation statements)

References 23 publications

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“…2 A very important consequence of this is that owing to the relatively close match in lattice constants, single-crystal ZnO may be used as a substrate to grow epitaxial GaN that is well oriented with respect to the substrate and that has a reduced defect density. 3 Further practical advantages of ZnO include amenability to conventional wet chemistry etching, which is compatible with Si technology 4 ͑unlike the case for GaN͒.…”

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confidence: 99%

Electrical characterization of vapor-phase-grown single-crystal ZnO

Auret

Goodman

Legodi

et al. 2002

Applied Physics Letters

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172

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Gold Schottky-barrier diodes ͑SBDs͒ were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with temperature-dependent Hall measurements suggests that the 0.12 eV level has a temperature activated capture cross section with a capture barrier of about 0.06 eV and that it may significantly contribute to the free-carrier density. Based on the concentrations of defects other than this shallow donor, we conclude that the quality of the vapor-phase-grown ZnO studied here supercedes that of other single-crystal ZnO reported up to now. © 2002 American Institute of Physics. ͓DOI: 10.1063/1.1452781͔During the past few decades, ZnO has been used in many, diverse products. Its applications, among others, include phosphors, piezoelectric transducers, varistors, alcohol synthesis catalysis, and gas sensing. In a recent review, however, where the properties of ZnO are summarized, 1 it was pointed out that ZnO can be used for several other, more advanced, electro-optical applications. Based on the fact that ZnO has a direct bandgap of 3.4 eV, it is expected to fulfill a similar role as GaN in optoelectronics, i.e., play an important role in realizing blue and ultraviolet light-emitting diodes and lasers, as well as daylight-blind UV detectors. Similar to that of GaN, its large band gap renders ZnO suitable for the fabrication of high-temperature, high-power devices with application, among others, in space where typical operating temperatures exceed 200°C. High-quality single-crystal ZnO can be successfully grown in bulk. 2 A very important consequence of this is that owing to the relatively close match in lattice constants, single-crystal ZnO may be used as a substrate to grow epitaxial GaN that is well oriented with respect to the substrate and that has a reduced defect density. 3 Further practical advantages of ZnO include amenability to conventional wet chemistry etching, which is compatible with Si technology 4 ͑unlike the case for GaN͒.An important issue in ZnO technology is establishing a technology for the fabrication of high-quality Schottkybarrier diodes ͑SBDs͒. SBDs are of key importance to probe defects in semiconductors by junction spectroscopic characterization techniques, such as deep-level transient spectroscopy ͑DLTS͒ ͑Ref. 5͒ and admittance spectroscopy ͑AS͒. 6 They are also important structures for metal-semiconductor field-effect transistors ͑MESFETs͒ and detectors. A limited amount of research regarding Schottky contacts to ZnO was carried out in the 1960s, where among other things the barrier height of some metal contacts to vacuum-cleaved ZnO was reported. 7 However, up to now, no systematic studies of surface characterization as a function of cleaning method have been performed; i.e., the influence of different cleaning methods on the surface quality of ZnO and the quality of Schottky contacts to ZnO have not been compared...

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confidence: 99%

Electrical characterization of vapor-phase-grown single-crystal ZnO

Auret

Goodman

Legodi

et al. 2002

Applied Physics Letters

Self Cite

172

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“…It is known that in bulk ZnO the peak within the ultraviolet range is usually ascribed to the near-band-edge transitions, including recombination of electron-hole pairs, free excitons, and bound excitons. The green emission (centered near 550 nm) in undoped ZnO is commonly referred to structural defects, such as zinc vacancy, oxygen vacancy, interstitial zinc, interstitial oxygen, and antisite oxygen [29][30][31][32][33][34][35]. This defect-related emission is a competing recombination channel for the UV emission, and, thus, is supposed to be unfavorable for applications of ZnO in the UV light emitting devices.…”

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confidence: 99%

Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method

Rudko¹,

Lashkaryov²,

Pisarzhevskii³

2015

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The nanocomposite -nanoporous silica (SBA-16) containing ZnO quantum dots -was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate precursor into the matrix pores from the gaseous phase, hydrolysis of the precursor, and thermal decomposition of the product with formation of ZnO nanoclusters directly inside the pores. The nanocomposite was characterized by XRD, nitrogen adsorption-desorption isotherms, and photoluminescence spectroscopy methods. We observed the blue shift of the ultraviolet luminescence of nanocomposite as compared to the luminescence of ZnO nanopowder as well as the decrease of the linewidth of the ultraviolet luminescence line, which points to the encapsulation of ZnO nanoparticles in the silica pores and narrowing of their size distribution.

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“…[11] gave a precious data to the researchers investigating exclusively the optical constants of ZnO. All these works show the important roles which play the zinc oxide in the new technology reason why the authors continued to study it for more information and applications [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Beside the experimental methods, certain authors used models to investigate the physical properties of the zinc oxide or others semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Diouf¹

2017

AJOP

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Abstract:The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.

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Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy

Cited by 108 publications

References 23 publications

Electrical characterization of vapor-phase-grown single-crystal ZnO

Electrical characterization of vapor-phase-grown single-crystal ZnO

Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

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