J. Mater. Chem. C
 2024
DOI: 10.1039/d4tc01846j
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Optical properties of Ga2O3 thin films grown by atomic layer deposition using GaI3 and O3 as precursors

Lauri Aarik,
Hugo Mändar,
Aarne Kasikov
et al.

Abstract: Absorption spectra, bandgap energies, refractive indices, and antireflection properties of atomic-layer-deposited amorphous Ga2O3, κ/ε-Ga2O3, and α-Ga2O3 films were Investigated.

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