Optical properties of Eu3+:CsGd2F7 downconversion phosphor

Luminescence of Eu3+/Gd3+ co-doped silicate sol–gel powders

“…1) corresponding to transition from the stable ground state 8 S 7/2 to the 6 D J level of Gd 3 þ is very weak compared to other registered peaks. Excitation on high-energy level ( 8 S 7/2 -6 G J transition of Gd 3 þ ) at about 200 nm, which is beneficial to the quantum cutting in Gd 3 þ -Eu 3 þ system, was not registered by us, in contrast to the earlier results obtained by Karbowiak et al [8], Liu et al [14], Wegh [15,16] and Lepoutre [19].…”

“…Therefore, the 6 G J -6 P J emission of Gd 3 þ ions is hardly distinguished from the 5 D 0 -7 F J transitions of Eu 3 þ ions. Such phenomena were described for systems: Eu 3 þ :CsGd 2 F 7 , Eu 3 þ : KGdF 4 and Gd 3 þ :LiYF 4 [7][8][9]. The 6 G J -6 I J transitions are also possible and these emissions are located in NIR spectral scope at about 750 nm [5].…”

“…According to the authors studying the energy transfer [1,[5][6][7][8][9][10][11][12][13] we can conclude, that this process allows to obtain more efficient emission than with direct excitation of lanthanide ions dopant. This research can create more efficient red emitters based on Gd/Eu systems.…”

“…This research can create more efficient red emitters based on Gd/Eu systems. In the literature there are many publications on the preparation of co-doped Eu/Gd materials, for example: LiGdF 4, GdF 3 , NaGdF 4 , CsGd 2 F 7 , BaF 2 , BaGd 2 ZnO 5 , and K 5 Li 2 GdF 10 [8,[11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], but only a few papers are available on the sol-gel synthesis of powders [8,14,[18][19][20][21][22]. In recent literature there are no reports on luminescence properties of obtained materials during direct excitation of Eu 3 þ or Gd 3 þ ions and through energy migration Gd 3 þ -Eu 3 þ process.…”

Energy-level calculations for Pr3+ in K2LaBr5 host

“…The decay times of f-d emission are very short in the range of 10-20 ns. Thus the praseodymium doped compounds could be good candidates both for ultraviolet tunable solid-state lasers and for fast scintillator devices [1][2][3][4][5][6][7][8][9].…”