Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy

Kim, J.M.; Park, C.Y.; Lee, Y.T.; Song, Jin Dong

doi:10.1016/j.jcrysgro.2005.07.020

Journal of Crystal Growth

2005

DOI: 10.1016/j.jcrysgro.2005.07.020

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Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy

J.M. Kim

C.Y. Park

Y.T. Lee

et al.

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Cited by 4 publications

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References 15 publications

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“…Recently, a digital alloy (DA) has been applied as an option for the growth of ternary or quaternary materials of various compositions by molecular beam epitaxy (MBE), without additional source cells or laborious growth interruption for cell temperature changes. 14,15) Different from a normal SL with a period of approximately 5 to 50 nm, DA is a type of intermixed crystal formed by the alternating epitaxy of different materials with a very short period, e.g., on an order of few monolayers (MLs). It has been found that the critical thickness of InAs/GaAs DA can be extended with respect to the InGaAs random alloys owing to the lower strain energy.…”

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confidence: 99%

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Yuan

Zhang

Wang

et al. 2012

Jpn. J. Appl. Phys.

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The dynamics of a phase defect (P-defect) on the Si(100) surface was studied for the first time by scanning tunneling microscopy in pseudo-real time below 10K, using the repeated-line-scan technique in which single line scans are repeated on the same path along a dimer row. In addition to the pair creation and annihilation of the P-defect, the effect of a step on the motion of the P-defect was clearly demonstrated. Since the local barrier height for the migration of the P-defect depends on the local environment such as strain and electronic structure due to the existence of defects or dopants, the obtained results also indicate that analysis of the P-defect is promising for local probing of the Si(100) surface.

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mentioning

confidence: 99%

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Yuan

Zhang

Wang

et al. 2012

Jpn. J. Appl. Phys.

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Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures

Boyer

Lepkowski

Chmielewski

et al. 2019

Solar Energy Materials and Solar Cells

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Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

Kim

Park

Lee

et al. 2006

Journal of Applied Physics

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An In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-well (MQW) structure grown by molecular beam epitaxy using a digital alloy method was parametrically investigated by photoluminescence (PL) measurement performed in a temperature range of 10–290K. The PL peak energies did not change with increasing temperature up to 60K, while the PL peak energy monotonously decreased with increasing temperature beyond 60K. From the curve fit of the linewidth full width at half maximum of the PL peak, it was observed that the homogeneous broadening of In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW with digital alloy barriers due to scattering by longitudinal optical phonons was smaller than that of InGaAs∕InGaAlAs MQW with digital alloy barriers. This is in accordance with the existence of a relatively weak phonon-related PL peak in the PL spectrum of InGaAlP digital alloy, as compared with InGaAlAs digital alloy. The fit of the integrated PL intensity shows the occurrence of a nonradiative recombination process with an activation energy E1=24.4meV up to 60K. On the other hand, the process of nonradiative recombination with an activation energy E2=109meV occurred above 60K, which is in good agreement with one-half of the calculated total confinement energy ΔE of the electron-hole pair in the quantum well (∼108meV). The In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW structure with digital alloy barriers has larger activation energy (E2=109meV) than In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P MQW (E2=90meV) with analog alloy barriers. Therefore, the thermal emission of carriers into the barrier can be reduced at temperatures above 60K due to the high effective barrier height.

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Optical properties of digital-alloy In0.49(Ga1−zAlz)0.51P/GaAs and InGaP/In0.49(Ga1−zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy

Cited by 4 publications

References 15 publications

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

InAlAs Graded Metamorphic Buffer with Digital Alloy Intermediate Layers

Modeling and experimental demonstration of short-wavelength carrier collection enhancement in Ga0.51In0.49P solar cells using graded (AlzGa1-z)xIn1-xP window-emitter structures

Optical characterization of digital alloy In0.49Ga0.51P∕In0.49(Ga0.6Al0.4)0.51P multi-quantum-wells grown by molecular beam epitaxy

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