Optical properties of defects in nitride semiconductors

Tischer, Ingo; Hocker, Matthias; Neuschl, Benjamin; Madel, Manfred; Feneberg, Martin; Schirra, M.; Frey, Manuel; Knab, Manuel; Maier, Pascal; Wunderer, Thomas; Leute, Robert A. R.; Wang, Junjun; Scholz, F.; Biskupek, Johannes; Bernhard, Jörg; Kaiser, Ute; Simon, Ulrich; Dieterle, Levin; Groiß, Heiko; Müller, Erich; Gerthsen, D.; Thonke, Klaus

doi:10.1557/jmr.2015.273

Cited by 6 publications

(4 citation statements)

References 53 publications

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“…These results are in good agreement with both theoretical predictions and experimental results [1,3,[7][8][9][10]16]. The eight XRD peaks for the bulk state in figure 8(a) and table 3 were equivalent to those of the 2H indices and corresponding d-spacings in the FFT images taken in diffraction mode from the transmission electron microscopy (TEM) measurements for the side (see figure 9(a)) and the cross-section (see figure 9(b)) of the ⃗ c axis of the grown Si needle [31][32][33][34]. The reflexes in the FFT image shown in figure 9(a) were equivalent to the spot indices and corresponding d-spacings of the (002), (110), (112), (006), and (116) 2H planes, respectively, in table 3; likewise, those shown in figure 9(b) were equivalent to the spot indices and corresponding d-spacings of the (110), (220), and (300) 2H planes in table 3.…”

Section: Lattice Parameters Of the Si Crystalmentioning

confidence: 82%

Optical property of hexagonal (2H) silicon crystal

Ahn¹,

Kim²,

Lee³

et al. 2021

Semicond. Sci. Technol.

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Hexagonal (2H) silicon (Si) semiconductors have excellent mechanical properties and optically diverse applications due to their structure and quasi-direct bandgap. The 2H-Si has a relatively lower direct band gap of approximately 1.69 eV at the Γ-point in comparison with that of diamond-silicon (i.e. 3.4 eV), but it is not actually a direct bandgap semiconductor. Herein, we report an optical property of wide spectrum light emission in visible and infrared ranges from grown Si crystals with a 2H structure of a 0 = 0.3824 nm, c 0 = 0.6257 nm, and c 0 /a 0 = 1.6362 corresponding to theoretical predictions and experimental results. Obtained via high-resolution transmission electron microscopy measurements, the crystal structure of the grown 2H Si possesses the only stable form of the 2H structure with the characteristic quasi-direct bandgap, achieved using mixed-source hydride vapor phase epitaxy at about 1200 • C. Raman, photoluminescence, and electroluminescence spectra, Commission International de l' Eclairage chromaticity coordinates of light emission, lattice parameters, and the quality of the crystals were evaluated and found to correspond with the predicted results. The reported material has potential applications in optoelectronics.

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Section: Lattice Parameters Of the Si Crystalmentioning

confidence: 82%

Optical property of hexagonal (2H) silicon crystal

Ahn¹,

Kim²,

Lee³

et al. 2021

Semicond. Sci. Technol.

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“…This would result in higher IQE from regions of the active region with larger potential fluctuations, such as near the apex. Additionally, Tischer et al [24] simulated the strain distribution on triangular-stripes and showed that significant strain-relaxation occurs at the apex of these structures. Several other groups have also shown that nanostructures with InGaN shells exhibit significantly lower strain energy density compared to planar InGaN QWs [18,46].…”

Section: Ae Tmentioning

confidence: 99%

“…The broad emission spectrum in these nanostructures presents a unique opportunity to investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics across a range of wavelengths that are emitted from different areas of the nanostripe (e.g., sidewalls vs. apex). In addition, triangular nanostripes exhibit a degree of strain relaxation near the apex and a study of QW properties in this region may yield information about the effects of reduced strain on InGaN alloy uniformity and IQE in III-nitride materials [24].…”

mentioning

confidence: 99%

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs

et al. 2018

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We investigate the spectrally resolved internal quantum efficiency (IQE) and carrier dynamics in semipolar [Formula: see text] core-shell triangular nanostripe light-emitting diodes (TLEDs) using temperature-dependent photoluminescence (TDPL) and time-resolved photoluminescence (TRPL) at various excitation energy densities. Using electroluminescence, photoluminescence, and cathodoluminescence measurements, we verify the origins of the broad emission spectra from the nanostructures and confirm that localized regions of high-indium-content InGaN exist along the apex of the nanostructures. Spectrally resolved IQE measurements are then performed, with the spectra integrated from 400-450 nm and 450-500 nm to obtain the IQE of the QWs mainly near the sidewalls and apex of the TLEDs, respectively. TDPL and TRPL are used to decouple the radiative and non-radiative carrier lifetimes for different regions of the emission spectra. We observe that the IQE is higher for the spectral region between 450 nm and 500 nm compared to the IQE between 400 and 450 nm. This result is in contrast to the typical observation that the IQE of planar GaN-based LEDs is lower for longer wavelengths (i.e., higher indium contents). We also observe a longer non-radiative recombination lifetime for the longer wavelength portion of the spectrum. Several explanations are proposed for the improved IQE and longer non-radiative lifetime observed near the apex of the nanostructures. The results show that nanostructures may be leveraged to design more efficient green LEDs, potentially addressing a long-standing challenge in GaN-based materials.

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“…Результаты ПЭМ исследований показали, что отличительной С учетом полученных данных было сделано предположение, что наблюдавшиеся особенности спектров люминесценции могут быть описаны в рамках модели GaN с " неклассическими" квантовыми ямами, предложенной Ребане и др. [15] и позднее развитой в работе [16]. Данная модель предполагает, что ДУ в кристаллической структуре гексагонального GaN представляют собой наноразмерные гетерополитипные структуры с атомноплоскими интерфейсами, и в силу своей двумерной природы являются естественными квантовыми ямами.…”

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Оптические Свойства Квазиобъемных Кристаллов Нитрида Галлия Со Структурой Высокоориентированной Текстуры

Мынбаева¹,

Смирнов²,

Мынбаев³

2021

Физика И Техника Полупроводников

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The results of a study of the optical properties of gallium nitride samples with a highly oriented texture structure grown without the use of traditional semiconductor or sapphire substrates are presented. It is shown that the stacking faults contained in the GaN blocks of the texture of the studied material are self-organized heteropolytype nanostructures, and that the effective luminescence in the ultraviolet spectral region associated with stacking faults I1 in the basal plane is determined by optical transitions of excitons localized near such natural defects in the single-crystalline bulk of the blocks of the GaN texture.

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Optical properties of defects in nitride semiconductors

Abstract: Abstract

Cited by 6 publications

References 53 publications

Optical property of hexagonal (2H) silicon crystal

Optical property of hexagonal (2H) silicon crystal

Spectrally-resolved internal quantum efficiency and carrier dynamics of semipolar $(10\bar{1}1)$ core-shell triangular nanostripe GaN/InGaN LEDs

Оптические Свойства Квазиобъемных Кристаллов Нитрида Галлия Со Структурой Высокоориентированной Текстуры

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