Optical Properties of Defects

Böer, Karl W.; Pohl, Udo W.

doi:10.1007/978-3-031-18286-0_17

Cited by 2 publications

(1 citation statement)

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“…If the vacancies were created within the crystal structure, localized states occur within the energy band gap and affect charge generation and charge recombination mechanism. 39 The band gap prominent peaks were observed at the peak position 423 nm, 440 nm and 485 nm and there were also some broad humps observed at peak positions 412 nm, 451 nm, 468 nm and 526 nm as displayed in Fig. 5a.…”

Section: Resultsmentioning

confidence: 86%

Facile Growth of Zinc Oxysulfide Nano Thin Film-based Visible Light Photosensor by Hydrothermal Method

Gupta,

Kumar,

Surbhi

et al. 2024

ECS J. Solid State Sci. Technol.

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Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.

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Section: Resultsmentioning

confidence: 86%