Optical properties of CuGaSe2 and CuAlSe2 layers epitaxially grown on Cu(In0.04Ga0.96)Se2 substrates

Abstract

Articles you may be interested inBand gap energy bowing and residual strain in CuAl ( S x Se 1−x ) 2 chalcopyrite semiconductor epilayers grown by low-pressure metalorganic vapor phase epitaxy A shallow state in molecular beam epitaxial grown CuGaSe2 film detectable by 1.62 eV photoluminescence

Optical and Structural Properties of High-Efficiency Epitaxial Cu(In,Ga)Se2 Grown on GaAs

“…14 PL analysis of CGS films grown on GaAs(100) 16 revealed the presence of excitonic and donor−acceptor pair (DAP) transitions, where the latter depended strongly on the gallium content in the films. Similar results were presented by Fujita et al, 29 and emission from DAP transitions in CGS grown on CIGS and GaAs(100) was also reported by Shirakata et al 27 Bauknecht et al identified two different DAP transition characteristics of CGS films. 32 These transitions were found to be invariant through the depth of polycrystalline films and for films on different substrates.…”

“…There is also a recent report from Ando et al of 11.3% efficient CIGS epitaxially grown on Mo . However, primarily single-crystal chalcopyrite studies have focused on the crystallinity studied by X-ray diffraction (XRD) and transmission electron microscopy (TEM) and the optical properties studied by photoluminescence (PL) and Raman spectroscopy. ,,− Several studies have focused on the band structure and electronic properties of the film surfaces . Detailed analysis of the optical properties of CIS on GaAs(100) and InGaAs substrates was reported by Niki et al., , where the PL emission was dominated by excitonic transitions with lower-energy phonon-related emission.…”

X‐Ray Fluorescence Holography Analysis of Local Structure in CuInSe2 and CuGaSe2

“…The crystal orientation was examined by an RHEED and an X‐ray diffraction measurements. The CuGaSe 2 layer exhibited a weak A ‐transition and an intense B ‐transition in the PR spectrum which showed the c ‐axis orientation, due to the selection rule of optical transition between the valence band and the conduction band. Low temperature PL exhibited the dominant exciton‐related PL peak, and the result showed high crystal quality in the CuGaSe 2 epitaxial layer.…”

Growth and characterization of CuAlSe2(112)/GaAs(100) heteroepitaxial layers grown by hot wall epitaxy method

“…The accurate determination of strain and composition is also very important for the application and understanding of the physical properties. The high-quality epitaxial growth of CuAlSe 2 has progressed through the metalorganic chemical vapor deposition (MOCVD), the metalorganic vapor phase epitaxy (MOVPE), and molecular beam epitaxy (MBE) [7][8][9]. On the other hand, the hot wall epitaxy (HWE) method [10], which has been used to grow a high-purity ZnSe epilayer at the low temperature [11], is one of the lowtemperature crystal growth technologies.…”