“…However, although the strong difference of SðtÞ for 370 and 380 nm indicates that the photoelastic effect is probably the dominant contribution, a detailed analysis is performed to exclude that the interface mechanism is responsible for the found behavior. In the beginning, we restrict our simulations to the photoelastic effect in the 100-nm GaN bulklike layer and the interface mechanism, since the complex index of refraction dispersion is known only for bulk material [20] but not for the QW. A model to calculate the reflectivity change ΔR normalized to the unperturbed value R 0 , which covers both effects, was developed before and is applied here to our experiment [12,21].…”