2006
DOI: 10.1016/j.nimb.2006.03.189
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Optical properties of Cu implanted ZnO

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Cited by 40 publications
(19 citation statements)
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“…Earlier ZnO data had revealed that both Cu and Tb implants displaced the TL emission patterns from that of the unimplanted material. [12][13][14] This type of change was observed again in the current study, as shown by Fig. 5.…”
Section: A Structural Relaxations Of Substratessupporting
confidence: 83%
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“…Earlier ZnO data had revealed that both Cu and Tb implants displaced the TL emission patterns from that of the unimplanted material. [12][13][14] This type of change was observed again in the current study, as shown by Fig. 5.…”
Section: A Structural Relaxations Of Substratessupporting
confidence: 83%
“…[12][13][14] There is, therefore, the potential that similar bulk changes from surface implants may be a more general feature, but they have rarely been discussed or sought, but clearly should be.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9] In a recent work, Zunger et al 10 questioned the reliability of the reported theoretical predictions pointing at the severe limitations of pure density functional theory approximations [local density approximation (LDA) and generalized gradient approximation (GGA)] in correctly and accurately describing band gap values and spin localization, both essential components when investigating TM doped semiconductors. The critical problem of state of the art methods in describing such complex systems as Cu-doped ZnO can largely benefit from a detailed comparison of a number of computed properties with available experimental data (in particular, defect or impurity levels position in the band gap from optical or photoluminescence spectroscopies 11,12 and their electron paramagnetic resonance parameters 13,14 ). In this paper we present a detailed study of copper bulk impurities in ZnO using the popular hybrid B3LYP a) Electronic mail: cristiana.divalentin@mater.unimib.it.…”
Section: Introductionmentioning
confidence: 99%
“…2(b) presents the result of Á 2 as a function of temperature calculated by a nonlinear least square fit, yielding an ionization energy of 88 meV. This rather small value corresponds to the formation of shallow donor states created by the incorporation of Cu atoms in bulk ZnO, which is not simple to rationalize since all Cu related species in ZnO have been reported in the literature as deep acceptors with ionization energies larger than 2 eV [14][15][16][17]. Note that a deep acceptor state would not lead to an apparent quasielastic peak broadening in HREELS.…”
mentioning
confidence: 99%
“…Several studies based on photoluminescence experiments [14,15], electrical measurements [16,17], and on GGA þ U calculations [18] have reported a deep acceptor state with the transition energy level (0, À1) high in the band gap. In this Letter we present a combined experimental and theoretical study of the Cu=ZnO system prepared by Cu deposition on ZnO single crystal surfaces.…”
mentioning
confidence: 99%