Abstract:The optical properties of a single-phase corundum-structured In2O3 epilayer grown by a mist chemical vapor deposition method have been studied. Raman scattering measurements on a c face and on a lateral face reveal all of the seven Raman-active modes of the corundum structure, with good adherence to the Raman selection rules. Three out of the four infrared-active modes are observed in the spectroscopic ellipsometry measurements. The phonon frequencies obtained from Raman and ellipsometry measurements are in ex… Show more
“…In contrast, those carbon-defect related bands were not detected for A1023, and new bands at 518, 1069, and 1460 cm −1 associated with In 2 O 3 (ref. 32) and NiO (ref. 33) appeared, suggesting the complete removal of the carbon shells.…”
The development of non-precious metal catalysts to replace the Pd-based industrial catalysts for 1,3-butadiene hydrogenation is highly sought. Yet, to date, the developed cheap transition metal-based candidates including Ni, Cu,...
“…In contrast, those carbon-defect related bands were not detected for A1023, and new bands at 518, 1069, and 1460 cm −1 associated with In 2 O 3 (ref. 32) and NiO (ref. 33) appeared, suggesting the complete removal of the carbon shells.…”
The development of non-precious metal catalysts to replace the Pd-based industrial catalysts for 1,3-butadiene hydrogenation is highly sought. Yet, to date, the developed cheap transition metal-based candidates including Ni, Cu,...
“…In 2 O 3 , despite having a stable cubic bixbyite phase (Ia3 ¯), 20) as well has a metastable corundum crystal structure. 21) This offers the opportunity of bandgap engineering over the wide range from 3.38 (α-In 2 O 3 ) 21) to 9.2 eV (α-Al 2 O 3 ). 22) It therefore covers a larger UV spectral range than the (Al x Ga 1−x )N system does (AlN E g = 5.96 eV 23) ), where already high electron mobility transistors, 24) laser diodes, 25,26) or solar-blind photodetectors 27) have been realized.…”
The anisotropic dielectric functions (DF) of corundum structured m-plane α-(Al
x
Ga1-x
)2O3 thin films (up to x=0.76) grown on m-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) have been investigated. Infrared (IR) and visible-ultraviolet (UV) spectroscopic ellipsometry yields the DFs, while X-ray diffraction revealed the lattice parameters (a, m, c), showing the samples are almost fully relaxed. Analysis of the IR DFs from 250 cm-1 to 6000 cm−1 by a complex Lorentz oscillator model yields the anisotropic IR active phonons Eu
& A2u
and the shift towards higher wavenumbers with increasing Al content. Analyzing the UV DFs from 0.5 to 6.6 eV we find the change in the dielectric limits ε∞ and the shift of the Γ-point transition energies with increasing Al content. This results in anisotropic bowing parameters for α-(Al
x
Ga1-x
)2O3 of b
⊥=2.1 eV and b
∥=1.7 eV.
Redshift of the absorption onset and amplitude increase in the ultraviolet complex dielectric function (DF) of corundum-like [Formula: see text]-(Ti xGa1− x)2O3 with increasing Ti content is presented. [Formula: see text]-Ga2O3 thin film samples alloyed with Ti up to [Formula: see text] are grown from plasma enhanced atomic layer deposition. They are characterized by ultraviolet spectroscopic ellipsometry, transmission electron microscopy, and x-ray photoelectron spectroscopy (XPS). The samples are shown to be crystalline up to [Formula: see text]. Ellipsometry is employed to obtain the ordinary complex DF, where the absorption onset shows a strong red shift with increasing Ti content as well as an increase in amplitude, which is associated with a successive take over of Ti related 3d-states in the density-of-states. Valence band XPS results lead to the conclusion that the strong red shift in the absorption onset with increasing Ti content is mainly due to conduction band lowering and less from the valence band.
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