Optical Properties of Cd-O and Zn-O Complexes in GaP

Morgan, T. N.; Welber, B.; Bhargava, R. N.

doi:10.1103/physrev.166.751

Cited by 204 publications

(27 citation statements)

References 12 publications

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“…Using the procedure implied by Eqs. (15) and (16), we get (E e -E m ) = 0.62 eV for the dominant electron level and (E e -E q ) = 1.08 eV for the dominant hole level. The latter, which could not be arrived at by any other interpretation, is consistent with a level reported from thermal-quenching measurements on HgS.…”

Section: A Mercury Sulfidementioning

confidence: 97%

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Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited Conduction

1969

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It is shown that measurement of thermal activation energies for both Ohmic and space-charge-limited conduction over a broad temperature range enables the deduction of both depth and concentration of localized levels in a semi-insulator, while measurement of the activation energy for Ohmic conduction alone is rarely definitive for a wide band-gap material. The basis for interpreting thermal activation energies for electrical conduction is discussed in detail. The analysis is applied to recent results on HgS, GaP, CdS, andZnS:Cd.

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Section: A Mercury Sulfidementioning

confidence: 97%

“…(1) and (2) with Eqs. (13) and (14) [or (15) and (16) N q and (/xoN c ). Of course, if the intrinsic quantity JJLON C were known from independent information, then measurement of Vm would simply provide a self-consistency check.…”

Section: G G Roberts and F W Schmidlinmentioning

confidence: 99%

Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited Conduction

1969

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“…In addition, T. Morgan did extensive work on defects in GaP. In collaboration with B. Welber and R. Bhargava, he showed that red luminescence is due to cadmiumoxygen or zinc-oxygen complexes rather than pairs, as had been previously supposed [226]. With H. Maier, Morgan demonstrated the importance of strain in determining ionization energies of defects [227] and applied the analyses to the oxygen center [228].…”

Section: Defects and Defect Controlmentioning

confidence: 94%

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

Keyes

Nathan

1981

IBM J. Res. & Dev.

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Work on semiconductor physics, devices, and materials science carried on at IBM in the last twenty-five years is reviewed. Topics covered include hot electrons, inversion layers, the injection laser, electroluminescence, the Gunn effect, MESFETs, solar cells, superlattices, and amorphous materials and effects.The earliest IBM work was devoted to the theory of transport properties, primarily the Hall effect, and to the study of electron states. One significant early result was obtained by J. A. Swanson [2], who showed that the wellknown result for the saturation Hall constant R. (the Copyright IWl by International Business Machines Coiporation. Copying is permitted without payment of royalty provided that (1) each reproduction is done without alteration and (2) the Journal reference and IBM copyright notice are included on the first page. The title and abstract may be used without further permission in computer-based and other information-service systems. Permission to republish other excerpts should be obtained from the Editor. 779

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“…7, using Eq [4]. The loss through killers is unimportant above p ----4.1017 cm -3, more so in comparison with the loss by the Auger effect.…”

Section: (14) Are Indicated By Dots Curve 3 Represents the Higher Llmentioning

confidence: 97%

“…[4] to experiment, Bo/rxl.o can be estimated at 2.5-3.8.10 -is cm ~. Assuming the low temperature value of rxro, being 107 sec -1 (6), to be applicable to GaP (Zn, O) at room temperature we obtain Bo ----2.5-3.8.10 -it cm~-sec -i.…”

Section: (14) Are Indicated By Dots Curve 3 Represents the Higher Llmentioning

confidence: 98%

Dependence of Recombination in p‐Type GaP ( Zn , O ) on Dopant Concentrations

Bye

1976

J. Electrochem. Soc.

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The luminescence of p-type GaP(Zn,O), a semiconducting material for light emitting diodes, is controlled by the transitions of the excited free electrons and by those of the electrons bound to the luminescent nearest-neighbor (ZncaOp) complexes. The results of the determination of the internal quantum efficiency (~l) on a large number of samples, prepared by solution growth and by liquid phase epitaxy and covering a zinc concentration range of 1027-5 9 10 is cm -~, lead to the conclusion that an Auger effect acting on the bound electrons is the dominant cause of the reduction of the internal efficiency of the samples with a free hole concentration (p) above 4 9 1017 cm -~, where also the trapping by "killers" becomes negligible. The Auger constant was derived, being ~3 9 10 -11 cm 3 sec -1. Below this concentration the thermalization of the electrons bound to the complexes is the more important effect enhancing the otherwise relatively small action of the killers. The best value for ~ is ~40% at p ~5 9 1017 cm-~. Decay time (~) measurements, using pulsed and sine-wave modulated excitation, provide insight in the effect of screening by free holes on the radiative and Auger transitions by using in the interpretation of the data the quantity (m/T) which is proportional to the effective radiative recombination rate (including the effect of screening mentioned). Both radiative and Auger transition probabilities are reduced by a common screening factor as low as 0.2. Electron diffusion length measurements on the epitaxial samples show a strong decrease of the minority carrier lifetime with increasing zinc concentration which is ascribed mainly to the trapping by the (ZnO) complexes whose concentration increases with the zinc dolce. This study also provides information on the oxygen incorporation during the crystal growth. This incorporation probably takes place at thermal equilibrium between the oxygen source and the solid GaP.[O] increases with [Zn] reaching ~10 is cm -3 at [Zn] ~ 5. 10 is cm-~.Semiconductor diodes that emit visible light are of increasing importance for certain applications, i.e., for indication and for display of symbols. The luminescence efficiency of such diodes is generally much below 100%. Various causes exist for this circumstance part of which are peculiar to the semiconductor material used and to the devices made from them. These causes are still a matter oi conjecture. In this respect the subject of this paper, p-type gallium phosphide doped with zinc and oxygen, is no exception. Partly these causes arise from the properties of the light emitting layer, i.e., p-type GaP(Zn, O). Another cause, generally of minor importance for this type of material, is the limited efficiency of injection of electrons into this layer.A study of dopant-dependent recombination in ptype GaP(Zn, O) is useful to elucidate the relevant properties of this layer with respect to both bulk efficiency and injection efficiency.With regard to the bulk efficiency results have been published by Dishman, DiDomenico, and Carus...

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Optical Properties of Cd-O and Zn-O Complexes in GaP

Cited by 204 publications

References 12 publications

Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited Conduction

Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited Conduction

Semiconductors at IBM: Physics, Novel Devices, and Materials Science

Dependence of Recombination in p‐Type GaP ( Zn , O ) on Dopant Concentrations

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