“…As important and powerful nondestructive characterization techniques, Raman spectroscopy and X-ray diffraction (XRD) have been extensively proposed to analyze crystalline structure, boron concentration, and residual stress in B-doped diamond films [6,8,9]. In previous work, thick (with thicknesses of more than ten or ten's microns) B-doped diamond films (including CVD freestanding polycrystalline films and single crystals) have been widely studied [3,4,[10][11][12][13][14] and applied in a variety of fields, such as electrochemistry electrodes, superconductors, and diamond-based optoelectronic devices. Since the growth process of thick (freestanding) B-doped films generally takes a long time (10 h or hours in tens), the corresponding B-doping and crystalline structure in the films would be strongly dependent on varying reaction ambient and growth features.…”