2010
DOI: 10.1016/j.spmi.2010.04.015
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Optical properties of an off-center hydrogenic impurity in a spherical quantum dot with Gaussian potential

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Cited by 76 publications
(27 citation statements)
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References 33 publications
(39 reference statements)
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“…The Schrödinger equation with Hamiltonian (2.4) can be solved taking polarization charges into consideration. The wave function which is a solution to the Schrödinger equation with Hamiltonian (2.4) is expressed by the expansion over the function (2.7): 12) i is the quantum number set n, l, m. Our task reduces to the linear system of equations…”
Section: -2mentioning
confidence: 99%
“…The Schrödinger equation with Hamiltonian (2.4) can be solved taking polarization charges into consideration. The wave function which is a solution to the Schrödinger equation with Hamiltonian (2.4) is expressed by the expansion over the function (2.7): 12) i is the quantum number set n, l, m. Our task reduces to the linear system of equations…”
Section: -2mentioning
confidence: 99%
“…Hence, the investigation of electronic and optical properties of hydrogenic impurities is essential to optimize the performance of the photoelectric devices. Many authors investigated the properties of hydrogenic impurities in SQDs [11][12][13][14][15][16][17][18][19]. In addition, external perturbation such as application of an electric and magnetic field can provide valuable information [20][21][22].…”
Section: Introductionmentioning
confidence: 99%
“…It was shown that the impurity has remarkable effects on the nonlinear optical properties such as absorption and refractive index changes. Xie studied the optical absorption coefficients and refractive index changes associated with intersubband transition of an off-center hydrogenic impurity in a spherical quantum dot (QD) with Gaussian confinement potential [29]. Cakir et al and Karabulut et al investigated the impurity effect on linear and nonlinear optical properties of a spherical SQD [15,30].…”
Section: Introductionmentioning
confidence: 99%
“…Under the confinement, the dopant location can tailor the electronic and optical properties of the system. This resulted to a wealth of important investigations on impurity states [2][3][4][5][6][7][8][9][10][11][13][14][15] in general, and also on their optoelectronic properties, in particular, for a wide variety of semiconductor devices [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31]. The research trend sheds light on new device physics mingled with profound technological impact.…”
Section: Introductionmentioning
confidence: 99%