Optical properties of amorphous SixGe1−x(H) alloys prepared by R.F. Glow discharge

Study of Bonding Configurations in Amorphous GexSi1−x:H Alloys

“…3 is obtained with cx = 0.33. This value supports the preferential attachment of Ge to the substrate and agrees with the ratio of the deposition rates of pure a-Ge : H and a-Si : H films reported by Chevallier et al [16]. A preferential sticking rate of germanium has been reported by several groups [4, 17,181 and explained by the weakness of the Ge-H bond, that can be more efficiently dissociated in the discharge.…”

Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens

“…Most of the studies were made on preparation and investigation of the properties of a-Si:H alloy with tetrahedrally co-ordinated elements such as C and Ge [11]. The effect of alloying halogen such as F or Cl [12] to a-Si:H was also investigated and has shown to have potential in certain applications [13].…”

Optical properties of Se or S-doped hydrogenated amorphous silicon thin films with annealing temperature and dopant concentration

“…Apart from solar cells, most studies on devices have focused on thin film transistors in which the gate metal is coated with an insulator, usually hydrogenated amorphous silicon nitride or silicon dioxide [25]. The doping of hydrogenated amorphous silicon with tetrahedrally coordinated elements such as C or Ge and halogens such as F or Cl has been studied by several groups [26,27]. The a-Si 1−x C x :H films are generally obtained by PECVD, through the decomposition of silane (SiH 4 ) or disilane (Si 2 H 6 ) and a hydrocarbon gas (CH 4 , C 2 H 4 , C 2 H 6 , etc.).…”