Optical properties of amorphous (As0.33S0.67)100−xTex (x=0, 1, 5 and 10) chalcogenide thin films, photodoped step-by-step with silver

Márquez, E.; González-Leal, J.M.; Bernal-Oliva, A.M.; Jiménez‐Garay, R.; Wágner, T.

doi:10.1016/j.jnoncrysol.2007.06.087

Cited by 58 publications

(17 citation statements)

References 16 publications

(25 reference statements)

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“…These results indicate that the v (3) values of (Ge 1 Se 2 ) 1-x Sn x films are large in comparison with reported values [45,48]. Therefore, the films under study are interesting materials in nonlinear optical devices.…”

Section: Dispersion Energy Parametersmentioning

confidence: 55%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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Different compositions of amorphous Sn x (GeSe) 100-x (0.0 B x B 0.12 at.%) thin films were deposited onto glass substrates by the thermal evaporation technique. The optical constants (n and k) and film thicknesses of Sn x (GeSe) 100-x thin films were obtained based only on their measured reflectance spectra in the wavelength range 300-2500 nm. It was found that the refractive index (n) increased while the optical energy gap (E g ) decreased with increasing tin content. The possible optical transition in these films obeys the allowed non-direct transitions. The obtained results were discussed in terms of the electronic polarizability (a e ). The dispersion parameters [the single-oscillator energy (E 0 ) and the dispersion energy (E d )] were obtained by fitting the refractive index according to Wemple and Di-Domenico model. The third-order nonlinear optical susceptibility v (3) was calculated with the help of E 0 and E d values. The obtained values of v (3) are too high, indicating that the films under study are interesting materials for nonlinear optical devices.

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Section: Dispersion Energy Parametersmentioning

confidence: 55%

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Aly

2015

Appl. Phys. A

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show abstract

“…Different authors [33][34][35] have suggested different values of p for different phases of semiconductor, p = 1/2 or 3/2 for allowed and forbidden direct interband transitions, respectively and p = 2 or 3 for the allowed and forbidden indirect transitions, respectively. The usual method for determining band gap is plot a graph between (ahm) 1/p and photon energy (hm) and look for the value of p which gives the best linear graph in the band edge region.…”

Section: Determination Of the Absorption Coefficient And The Optical mentioning

confidence: 99%

Thickness dependence of structural and optical properties of cadmium iodide thin films

Yahia

Shapaan

Ismail

et al. 2015

Journal of Alloys and Compounds

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“…10 illustrates the typical transmittance spectrum for d = 1103 nm. According to this method, the value of refractive index at a determined wavelength can be calculated using the expression [28,38,39]:…”

Section: Calculation Of the Refractive Index And Film Thicknessmentioning

confidence: 99%

“…Now, the values of n can be fitted to a reasonable function such as the two-term Cauchy dispersion relationship, n( ) = a + b/ 2 , which can be used for extrapolation the whole wavelengths [38] (see Fig. 10).…”

Section: Calculation Of the Refractive Index And Film Thicknessmentioning

confidence: 99%

Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

Shaaban

Afify

El-Taher

2009

Journal of Alloys and Compounds

156

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Optical properties of amorphous (As0.33S0.67)100−xTex (x=0, 1, 5 and 10) chalcogenide thin films, photodoped step-by-step with silver

Cited by 58 publications

References 16 publications

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

On the study of the optical constants for different compositions of Sn x (GeSe)100−x thin films in terms of the electronic polarizability, electronegativity and bulk modulus

Thickness dependence of structural and optical properties of cadmium iodide thin films

Effect of film thickness on microstructure parameters and optical constants of CdTe thin films

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