2023
DOI: 10.1140/epjp/s13360-023-03742-7
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Optical properties of AlxInyGa1−x−yAs/AlzGawIn1−z−wAs quantum wells under electric and magnetic fields for telecommunication applications

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(1 citation statement)
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“…Advanced growth techniques have enabled the production of various low-dimensional semiconductor quantum systems such as quantum wells based on large-band-gap semiconductors showing impressive success in optoelectronic and microelectronic devices [1][2][3][4][5][6][7]. Structures constructed from AlGaAs/GaAs have been examined extensively among III-V [8][9][10] semiconductor materials because they can be integrated into innovative quantum cascade devices [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…Advanced growth techniques have enabled the production of various low-dimensional semiconductor quantum systems such as quantum wells based on large-band-gap semiconductors showing impressive success in optoelectronic and microelectronic devices [1][2][3][4][5][6][7]. Structures constructed from AlGaAs/GaAs have been examined extensively among III-V [8][9][10] semiconductor materials because they can be integrated into innovative quantum cascade devices [11,12].…”
Section: Introductionmentioning
confidence: 99%