Optical Properties of Alkaline-Earth Chalcogenides. I. Single Crystal Growth and Infrared Reflection Spectra Due to Optical Phonons

Kaneko, Yoshio; Morimoto, Koichi; Koda, T.

doi:10.1143/jpsj.51.2247

Cited by 76 publications

(38 citation statements)

References 29 publications

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“…The fitted TOphonon frequencies, oscillator strengths, and damping parameters for all the five PbSrSe samples are listed in Table I. 10,12 From Fig. 1͑b͒ the calculated reflection spectra of the five Pb 1Ϫx Sr x Se thin films using only TO,1 , TO,2 , and their strength and damping parameters in Table I ͑without TOϩLO,1 and 2TO,2 , as well as those of BaF 2 substrates͒.…”

Section: A Fir Reflection Resultsmentioning

confidence: 99%

Long-wavelength optical phonons and mode behavior of Pb1−xSrxSe thin films

Chen

Shen

2003

Journal of Applied Physics

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Far-infrared ͑FIR͒ reflection measurements have been employed to study the long-wavelength optical phonons and their mode behavior in PbSrSe thin films grown by molecular beam epitaxy on BaF 2 substrates with different Sr concentrations. The optical phonon frequencies are obtained by calculating FIR reflection spectra using a multioscillator model and Kramers-Kronig dispersion analysis. Both the PbSe-like and SrSe-like optical phonon reflection bands have been identified in ternary PbSrSe thin films. The modified random-element-isodisplacement model has been used to analyze the long-wavelength optical mode behavior of the PbSrSe alloy. A mixed mode of the Pb 1Ϫx Sr x Se alloy has been revealed with critical point of xϭ0.71, which can be further confirmed by a simple atomic mass criterion.

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Section: A Fir Reflection Resultsmentioning

confidence: 99%

Long-wavelength optical phonons and mode behavior of Pb1−xSrxSe thin films

Chen

Shen

2003

Journal of Applied Physics

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“…It is clear from the lines representing the SrS/Si interface that the optimum beam energy for (5000 Å) thick films is between 7-10kV. Figure 10 shows the CL intensity as a function of beam energy at 1, 5, 10, and 15 kV respectively for the highest doped ion implanted sample (dose = 5x10 14 Te/cm 2 , Te concentration = 1x10 19 atom/cm 3 ). The strongest CL emission is observed at 10 kV, confirming the simulations as a function of beam penetratio n depth.…”

Section: Resultsmentioning

confidence: 99%

“…In the initial study, three ~ 0.5µm SrS films deposited on Si were implanted with Te ++ at Los Alamos National Laboratories. Doses of 5x10 12 , 5x10 13 , 5x10 14 atoms/cm 2 were implanted at 150kV (300KeV for Te ++ implantation energy) which should yield Te concentrations on the order of 1x10 17 , 1x10 18 , 1x10 19 atoms/cm 3 , respectively, subsequent to the post implant drive-in and activation anneal. Another set of 0.5µm films were capped by PLD with ~ 3, 6, 9, and 12 Å of Te (ie.…”

Section: Methodsmentioning

confidence: 99%

“…The phonon energy calculated for the Te S emission band was 37.8 meV, which was in excellent agreement with the SrS longitudinal optical phonon energy (35meV). 14,15 This suggested that the Te S site is coupled strongly to the vibrational energy of the SrS lattice. The calculated Te S -Te S phonon energy was 18.4meV, which was close to the calculated SrTe longitudinal optical phonon energy (22.8meV -calculated using the central force model for diatomic molecules).…”

Section: Introductionmentioning

confidence: 99%

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Ultraviolet Emitting SrS:Te Thin Films

et al. 2002

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In the bulk SrS has an indirect bandgap of ~ 4.32 eV. When SrS is doped with tellurium, ultraviolet emission occurs at 360 nm (for singlet) and 400nm (for Te-Te dimers) due to recombination from bound exciton states. In this paper we discuss the ultraviolet emission of pulsed laser deposited thin films of SrS:Te grown at room temperature on Si. Deposited film thickness ranged from 0.1 -1.5 µm, with optimized films grown at ~0.5 µm to avoid peeling and cracking. Te doping was incorporated by both ion implantation and conventional diffusion of deposited Te capping films. The characteristics of the ultraviolet emission will be discussed along with results from microstructural, chemical and optical characterization techniques.

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“…An IR band of SrS should be observed at 185 cm −1 and 280 cm −1 , so there is no IR activity expected in the measured region [16]. The measured intensities between 2200 and 1900 cm −1 are signals from the ATR diamond module ( Figure S2).…”

Section: Sr Ba Eu Ybmentioning

confidence: 92%

The Decomposition Products of Sulfur Hexafluoride (SF6) with Metals Dissolved in Liquid Ammonia

Deubner

Kraus

2017

Inorganics

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Sulfur hexafluoride is a highly chemically inert gas with several important industrial applications. It is stable against fused alkali, oxygen and ammonia, even at several hundred degrees Celsius. In this work, the reactions between metals (Li-Cs, Sr, Ba, Eu, Yb) dissolved in liquid ammonia and SF 6 are reported, leading to mono-or bivalent fluorides and sulfides. To this end, SF 6 was passed into a cooled solution of the respective metal in liquid ammonia. The identity of the products was confirmed by powder X-ray diffraction and IR spectroscopy. The reactions could lead to a cheap and effective disposal method of the present amounts of stored SF 6 , for possible generation of H 2 S and HF.

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Optical Properties of Alkaline-Earth Chalcogenides. I. Single Crystal Growth and Infrared Reflection Spectra Due to Optical Phonons

Cited by 76 publications

References 29 publications

Long-wavelength optical phonons and mode behavior of Pb1−xSrxSe thin films

Long-wavelength optical phonons and mode behavior of Pb1−xSrxSe thin films

Ultraviolet Emitting SrS:Te Thin Films

The Decomposition Products of Sulfur Hexafluoride (SF6) with Metals Dissolved in Liquid Ammonia

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