Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

Güner, S.; Budak, S.; Gibson, BC; Ila, D.

doi:10.1016/j.apsusc.2014.01.202

Cited by 12 publications

(5 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As seen from the resistivity curves for each different thermoelectric device, the resistivity values decreased when the annealing temperatures increased. This is a very remarkable result since the good thermoelectric material have lower electrical resistivity or higher electrical conductivity (Güner et al, 2014). Fig.…”

Section: Methodsmentioning

confidence: 89%

“…As seen from the conductivity curves for each different thermoelectric device, the electrical conductivity values increased when the annealing temperatures increased. This is a very remarkable result since the good thermoelectric materials have higher electrical conductivity values (Güner et al, 2014). Figure 9 shows the thermal treatment dependence of the electrical conductivity for Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films for unannealed and annealed devices with the annealing temperatures changing up to 300°C.…”

Section: Methodsmentioning

confidence: 91%

“…Budak et al (2015b) also performed some researches on the thermal treatment effects on the thermoelectric properties of thermoelectric devices (Budak et al, 2017;2015b). Like the ion beam bombardment, thermal annealing caused similar improvements on the thermoelectric properties of the fabricated thermoelectric devices since thermal annealing caused nano-cluster structures forming (Güner et al, 2014) in the layers to increase the Seebeck coefficients and the electrical conductivity and decrease in the thermal conductivity values at suitable annealing temperatures. Due to the motivation of success in high energy ion beam and temperature annealing on the material systems, this study aims to perform thermal annealing effects on the multilayer thin films to see how their thermoelectric properties are effected from the thermal treatment at different temperatures.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

Budak¹,

Yang²

2020

American Journal of Engineering and Applied Sciences

View full text Add to dashboard Cite

The multilayer thermoelectric devices including Ni/200 layers of Si/Si + Sb/200 layers of Si/Si + Ge/Ni thin films were fabricated using electron beam and DC/RF magnetron sputtering deposition systems. The thickness measurements have been performed using Filmetrics UV thickness measurement system. The Au contacts at the bottom and top of the fabricated thermoelectric devices were measured as 100 nm for each side. Ni layer at the bottom is 108 nm and Ni layer at the top of the multilayer structures is 168 nm. The thickness of 200 layers of Si/Si + Ge thin film is 173 nm and the thickness of 200 layers of Si/Si + Sb thin film is 199 nm. The fabricated thermoelectric devices have total of 402 layers of thin films with the total thickness of 648 nm thickness excluding two Au contact layers. The prepared thin film devices were annealed at different temperatures for one hour to improve the thermoelectric properties. The current studied system has reached some remarkable values of Seebeck coefficients when the suitable annealing temperatures and the suitable operating temperatures of Seebeck measurement system were applied. The multilayer thin film system has reached the Seebeck coefficient of-344.8 μV/K when the annealed temperature was 100°C and the operating temperature was 320 K. One of the main problems with the thermoelectric devices is having higher temperature dissipation during the operation of the devices. Ni thin film was used in the fabrication process to remove excess of the heat as a heat sink from the thermoelectric devices. This will bring new approach for the high efficient thermoelectric devices. The goal of the manuscript is to improve the thermoelectric properties of the fabricated thin film thermoelectric devices using Ni thin films and the thermal treatment. The resistivity values decreased when the annealing temperatures increased. The highest power factor values were reached when the thermoelectric devices were annealed at 100°C. Mobility values increased when the suitable temperatures were applied for thermal treatment.

show abstract

Section: Methodsmentioning

confidence: 89%

Section: Methodsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

Budak¹,

Yang²

2020

American Journal of Engineering and Applied Sciences

View full text Add to dashboard Cite

show abstract

“…Silica as well as materials from the ZrO 2 -SiO 2 system have got high thermal, electrical, and magnetic conductivity [ 1 ]. They also present very good optical properties [ 2 ]. Amorphous gels of the ZrO 2 -SiO 2 system usually exhibit a high reflection coefficient and simultaneously good mechanical and thermal properties [ 3 ].…”

Section: Introductionmentioning

confidence: 99%

The Study of the Influence of ZrO2 Precursor Type and the Temperature of Annealing on the Crystallization of the Tetragonal Polymorph of ZrO2 in Zirconia-Silica Gels

Adamczyk

2022

Gels

View full text Add to dashboard Cite

Materials of the ZrO2-SiO2 system were obtained by the sol-gel method applying two different types of ZrO2 precursors: zirconium (IV) n-propoxide Zr(OC3H7)4 and zirconium (IV) acetate Zr(OOC2H3)4 (organic acetic acid salt) while commonly used tetraethoxysilane TEOS was selected as SiO2 introducing one. ZrO2 concentration in synthesized samples varied from 20% to 50% (mol.). After drying for 28 days, all gels were annealed at 500 °C, 1000 °C, and 1200 °C in air. FTIR spectroscopy together with XRD diffraction was selected as the two main structure research methods. SEM microscopy was applied to analyze the local chemical compositions of samples and to observe the morphology of gels’ surfaces. The analysis of FTIR spectra and XRD diffraction patterns allowed us to recognize different ZrO2 polymorphs which appeared in the samples depending strongly as well on ZrO2 precursor type as on the temperature of annealing. Samples synthesized by using the zirconium (IV) n-propoxide contained both cubic and tetragonal zirconia phases in general but showed the tendency of the increasing t-ZrO2 content in gels richer in ZrO2 and heated up to 1200 °C. However, in materials obtained applying zirconium (IV) acetate, the first detected at 500 °C phase was t-ZrO2 which was then conversing to m-ZrO2 form with the increasing temperature in case of samples rich in ZrO2. Meanwhile, t-ZrO2 was the predominant phase in samples of the lower content of ZrO2 but annealed at higher temperatures. By the analysis of changes in band profiles and positions, one can draw conclusions that the structure of studied samples is mostly built up of an amorphous silica matrix, in which different types of zirconia polymorphs create their own crystal lattice. The presence of the particular polymorph depends strongly on the type of zirconia precursor and the temperature of annealing.

show abstract

“…One is to cover the surfaces of materials with different types of coatings. Layers based on the silica matrix allow for changes in their properties by the addition of other components, e.g., Al 2 O 3 , TiO 2 , ZrO 2 or Ag [5][6][7][8][9][10][11], and usually provide good mechanical features, good durability and often high chemical resistance. There are several methods of thin films deposition, depending on the type of substrate and the source of the coating components, such as CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), laser ablation [12] or dip-coating.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Organically Modified Derivatives of Silica on the Structure and the Wetting Angle Values of Silica Coatings

Adamczyk

2021

Coatings

View full text Add to dashboard Cite

The surrounding environment often acts in a destructive way on materials we apply in our everyday life. The best way to protect them against such activity is to cover the basic materials with coatings possessing different properties, tailored to their applications. Anticorrosive layers are one of the biggest groups of such protective coatings, especially those containing silica or its derivatives. Depending on a type of silica precursor and a method of deposition, one can obtain coatings of different structures and properties. In this work, three different silica precursors were applied: TEOS (tetraethylorthosilane), DDS (dimethyldiethoxysilane) and AerosilTM (the powder silica). Sols of different concentrations of the aforementioned precursors as well as commercially available preparations (Sarsil H1 4/2 and SILOXAN W290) were applied for thin films deposition by a dip coating or an infiltration method. The substrates could be divided in two groups: metallic (steel and titanium or titanium alloys) and porous (represented by old brick, sandstone and limestone). Following the deposition process, the layers on metallic substrates were additionally annealed at 500 °C to improve their adhesion and mechanical properties, while those on porous materials were dried in air. All prepared coatings were primarily studied by FTIR spectroscopy and X-ray diffraction. The morphology of their surfaces was imaged by SEM and AFM microscopies, which also allowed determination of the roughness of obtained materials. The measurements of wetting angle values enabled to find the relationship between the surface topography, the type of silica precursor and the hydrophobic/hydrophilic properties of the samples. The results confirmed the hydrophobic properties of coatings obtained by the infiltration technique on the porous materials and the high hydrophilicity of the annealed thin film deposited on the metallic substrates.

show abstract

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

Cited by 12 publications

References 17 publications

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

Thermal Treatment Effects on the Thermoelectric Properties of Ni/Si/Si + Sb/Si/Si + Ge/Ni Multilayer Thin Films

The Study of the Influence of ZrO2 Precursor Type and the Temperature of Annealing on the Crystallization of the Tetragonal Polymorph of ZrO2 in Zirconia-Silica Gels

The Influence of Organically Modified Derivatives of Silica on the Structure and the Wetting Angle Values of Silica Coatings

Contact Info

Product

Resources

About