Optical properties of a-HfO2 thin films

Khoshman, Jebreel M.; Kordesch, Martin E.

doi:10.1016/j.surfcoat.2006.08.074

Cited by 106 publications

(67 citation statements)

References 16 publications

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“…The measurements were carried out in air at room temperature in the wavelength range of 280-1100 nm with a step of 10 nm at an incident angle of 65°and 75°. Cauchy-Urbach model [15] was used to obtain the thicknesses and optical constant of the as-prepared IGZO thin films. The resistivity of IGZO films were measured by electrochemical workstation (CHI660D) in ladder wave voltammetry, measuring voltage range from À5 V to 5 V.…”

Section: Methodsmentioning

confidence: 99%

Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

Chen¹,

He²,

Liu³

et al. 2014

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

Chen¹,

He²,

Liu³

et al. 2014

Journal of Alloys and Compounds

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“…The use of Cauchy model to study HfO 2 films has also been reported in the literature. 30,37 The optical constants of the crystalline silicon (Si) substrate and the silicon dioxide (SiO 2 ), i.e., n ¼ 1.46 for stoichiometric SiO 2 were obtained from the literature. 38,39 The parameters, such as thickness and optical constants (n and k) of HfO 2 thin film, were left as variables.…”

Section: Data Analysis Of Spectroscopic Ellipsometrymentioning

confidence: 99%

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Cantaş

Aygün

Basa

2014

Journal of Applied Physics

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We have investigated the reduction of unwanted interfacial SiO 2 layer at HfO 2 /Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO 2 thin films for possible direct contact between HfO 2 thin film and Si substrate, necessary for the future generation devices based on high-j HfO 2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO 2 thin films and also to undertake the in-situ characterization of the high-j HfO 2 thin films deposited on n-type h100i crystalline silicon substrate. The formation of the unwanted interfacial SiO 2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO 2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-j HfO 2 thin films are crystalline although they were deposited at room temperature. V C 2014 AIP Publishing LLC.

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“…Due to a high transmittance over a wide spectral range from the ultraviolet (200 nm) to near-infrared (1.2 µm), low optical absorption and dispersion [6][7][8], high reactive index (about 1.85-2.15) [2,9], wide band gap energy (E g = 5.8 eV) [1,10] and hydrophobic properties [2,9], hafnium dioxide is one of the most commonly used materials in optical applications [11,12]. Depending on the conditions, hafnium oxide can exist in one of the three polymorphous forms.…”

Section: Introductionmentioning

confidence: 99%

“…Thin films based on HfO 2 are frequently used as innovative materials in numerous optical devices such as optical filters, ultraviolet heat mirrors, antireflection coatings and in cameras used for space applications [2,15]. According to the literature [11,12], amorphous HfO 2 films can be also used in flexible thin film capacitors, fiber-optic waveguides, computer memory elements and optical coatings deposited on polymer substrates.…”

Section: Introductionmentioning

confidence: 99%

Influence of Material Composition on Structural and Optical Properties of HfO2-TiO2 Mixed Oxide Coatings

et al. 2016

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Abstract:In this paper the influence of material composition on the structural, surface and optical properties of HfO 2 -TiO 2 mixed oxide coatings was investigated and discussed. Five sets of thin films were deposited using reactive magnetron sputtering: HfO 2 , TiO 2 and three sets of mixed HfO 2 -TiO 2 coatings with various titanium content. The change in the material composition had a significant influence on the structural, surface and optical properties. All of the deposited coatings, except for (Hf 0.55 Ti 0.45 )O x , were nanocrystalline with crystallites ranging from 6.7 nm to 10.8 nm in size. Scanning electron microscopy measurements revealed that surface of nanocrystalline thin films consisted of grains with different shapes and sizes. Based on optical transmission measurements, it was shown that thin films with higher titanium content were characterized by a higher cut-off wavelength, refractive index and lower optical band gap energy. The porosity and packing density were also determined.

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Optical properties of a-HfO2 thin films

Cited by 106 publications

References 16 publications

Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

Modulation of optical and electrical properties of sputtering-derived amorphous InGaZnO thin films by oxygen partial pressure

In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering

Influence of Material Composition on Structural and Optical Properties of HfO2-TiO2 Mixed Oxide Coatings

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