Optical Properties in Mid-Infrared Range of Silicon Oxide Thin Films with Different Stoichiometries

Abstract

SiOx thin films were prepared using magnetron sputtering with different O2 flow rates on a silicon substrate. The samples were characterized using Fourier transform infrared spectroscopy in transmission and reflection, covering a spectral range of 5 to 25 μm. By employing a multilayer model, the values of the complex refractive index that best fit the experimental transmission and reflection results were optimized using the Brendel–Bormann oscillator model. The results demonstrate the significance of selecting an appropriate range of O2 flow rates to modify the SiOx stoichiometry, as well as how the refractive index values can be altered between those of Si and SiO2 in the mid-infrared range.

Enhancing mid-infrared surface phonon polariton modes: optimization of structural parameters in Nb-doped SrTiO3 with hole array structures for advanced infrared sensors

“…In the pursuit of a comparative analysis, an examination of five widely recognized optical materials has been conducted. These materials include SiO 2 [27], h-BN [28], SiC [29], GaN [30], and ZnO [31], with the results of this evaluation being presented in figure 2.…”