Optical Properties for Ti Doped Thin Zno Films Prepared By PLD

Alias, M. F. A.; Rashid, Kh. M.; Adem, Kadhim A.

doi:10.15680/ijirset.2014.0308064

Cited by 12 publications

(8 citation statements)

References 10 publications

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“…The E g value of undoped ZnO film is 3.7 (eV). By doping 1%Ti into the ZnO thin film, its band gap energy reduces 3.6 eV, because Ti introduces interband energy levels into the ZnO thin film, which reduces the energy band gap 92 . When (0.5%, 1%, and 1.5%) Cu is doped into the 1% Ti‐ZnO, E g is 3.5, 3.37, and 3.47 eV respectively.…”

Section: Resultsmentioning

confidence: 99%

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

et al. 2020

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Summary ZnO, 1% Ti doped ZnO and 1% Ti and (0.5%, 1%, and 1.5%) Cu co‐doped ZnO thin films are deposited on fluorine doped tin oxide glass substrates using sol‐gel technique. The impact of Ti and Cu co‐doping on optical, structural, and photovoltaic properties of ZnO thin films have been analyzed. X‐ray diffraction also confirms the hexagonal wurtzite crystal structure of the film. The 1% Ti and 1% Cu co‐doping percentage has an astonishing impact on the structural properties of the doped film, such as large grain size (19 nm), d‐spacing (2.48 Å), small dislocation line density (2.96 × 1015 m−2), lattice parameters (a = b = 3.2 Å, c = 5.2 Å), bond length (1.9 Å) and positional parameter (3.7 × 10−1) of the ZnO thin film. Optical parameters like reflectance, absorbance, transmittance, refractive index, and dielectric constants are calculated in the range of spectral from (250‐750) nm by using an ultraviolet ‐ visible spectrophotometer. In the visible region, all the films have approximately 85% transmittance, which is excellent for solar cells. The ZnO film prepared at the co‐doping percentage of 1% Ti and 1% Cu has high absorbance, high refractive index (2.09) and small band gap energy (3.37 eV) as compared to other doped films. The dye‐sensitized solar cells of these films as a Photoanode have been fabricated and studied the efficiency variation of films. It is found that the performance of the dye‐sensitized solar cell (DSSC) using a Ti‐Cu co‐doped film is much better than a pure ZnO film. The highest efficiency of DSSC 2.38% is achieved in the dye‐sensitized solar cell by using a 1% Ti and 1% Cu co‐doped ZnO thin film. When Ti is doped in ZnO then the surface area and pore size of the ZnO increased, which increase the dye loading ability. Cu reduces the recombination rate and enhances the electron injection efficiency rate from the dye to the conduction band of ZnO. Therefore, it is suggested that the thin films prepared by co‐doping of Cu and Ti into ZnO will upgrade the efficiency of cell.

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Section: Resultsmentioning

confidence: 99%

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

et al. 2020

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“…5 illustrates the variation of extinction coefficient with wavelength in the range of (400-1100) nm for (Ti6Al4V) films deposited on glass substrate for at different RF powers. The extinction coefficient depends mainly on absorption coefficient for this reason we noticed that the increases of extinction coefficient with increasing wavelength because the increment in absorption coefficient [13]. Fig.7 show the dielectric constant and dielectric loss as a function of wavelength for (Ti6Al4V) thin films deposited at different RF power.…”

Section: Fig 3: Absorbance As a Function Of Wavelength For (Ti6al4v)mentioning

confidence: 92%

“…The variation of the dielectric constant depends on the value of the refractive index. By contrast, the dielectric loss depends mainly on the extinction coefficient values which are related to the variation of absorption [13]. The variation of the refractive index versus wavelength in the range (400-1100) nm, for deposited (Ti6Al4V) films on glass different RF power deposited on glass substrate.…”

Section: Fig 3: Absorbance As a Function Of Wavelength For (Ti6al4v)mentioning

confidence: 99%

Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

Khalaf¹

2019

IJP

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Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

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“…Figure 6 illustrates the variation of extinction coefficient with wavelength in the range of 400 nm-1100 nm for Ti6Al4V films deposited on the glass substrate at different RF powers. The extinction coefficient depends mainly on the absorption coefficient, and we notice that the extinction coefficient decreases with an increase in the wavelength because of the increment in the absorption coefficient [13]. Figures 7 and 8 show the dielectric constant and dielectric loss as a function of wavelength for Ti6Al4V thin films deposited at different RF powers.…”

Section: Optical Measurementsmentioning

confidence: 95%

“…The variation of the dielectric constant depends on the value of the refractive index. By contrast, the dielectric loss depends mainly on the extinction coefficient values which are related to the variations of absorption [13]. The variations of the refractive index are versus wavelength in the range 400 nm-1100 nm.…”

Section: Optical Measurementsmentioning

confidence: 99%

Effect of radio frequency magnetron sputtering power on structural and optical properties of Ti6Al4V thin films

2017

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In this research, the effects of target sputtering power on the structure and optical properties of radio frequency (RF) sputtered Ti6Al4V films were investigated. Different sputtering RF powers were used to produce different thicknesses of Ti6Al4V thin films. From the X-ray diffraction, it was found that the Ti6A14V films had polycrystalline cubic and hexagonal structures and increased films crystallinity and crystalline size with increasing the sputtering power. Atomic forces microscopy (AFM) gave us a nanometric film character, films homogeneity, and surfaces roughness. A higher degree of roughness and average grain size with increasing RF power was exhibited. Band gap and refractive index of Ti6Al4V thin films varied with sputtering RF powers.

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Optical Properties for Ti Doped Thin Zno Films Prepared By PLD

Cited by 12 publications

References 10 publications

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

Structural and optical properties of Ti and Cu co‐doped ZnO thin films for photovoltaic applications of dye sensitized solar cells

Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

Effect of radio frequency magnetron sputtering power on structural and optical properties of Ti6Al4V thin films

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