Optical properties and applications of chalcogenide glasses: a review

Zakery, A.; Elliott, S. R.

doi:10.1016/j.jnoncrysol.2003.08.064

Cited by 996 publications

(533 citation statements)

References 65 publications

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“…The reflectivity of this structure was measured via the prism as a function of incident angle using both p-and s-polarized Photo-induced changes in the chalcogenide excited by low-intensity white light (via one or a combination of photo-refractive, -darkening and -expansive effects [15,16]) provide an accessible mechanism for low frequency transient plasmonic modulation in the experimental Kretschmann geometry. With the incident angle for the probe beam detuned from resonance (i.e.…”

Section: Chalcogenide Plasmonics: Experimentsmentioning

confidence: 99%

Ultrafast active plasmonics

et al. 2008

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1 Introduction Much recent interest in the field of plasmonics has been driven by the prospect of highbandwidth, nanoscale data transport and processing systems based on surface plasmon-polaritons (SPPs) as information carriers and an enhanced plasmonic synergy between today's microelectronic and photonic technologies. 'Active plasmonic' devices able to dynamically switch and modulate SPP signals will be crucial to such applications and a range of functional media have been investigated for this purpose in recent years [1]. With proof-of-principle demonstrations pushing performance limits into technologically competitive terahertz modulation frequency [2] and femtojoule switching energy [3] domains, increasing attention is being given to practical issues like CMOS (complementary metal-oxide semiconductor) and/or SOI (silicon-on-insulator) process compatibility and the longterm performance characteristics of switching media.

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Section: Chalcogenide Plasmonics: Experimentsmentioning

confidence: 99%

Ultrafast active plasmonics

et al. 2008

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“…[1][2][3][4] Their usage ranging from optics, electronics to memory applications has stimulated a wide interest for a more thorough understanding of such materials properties and the variations of such properties with composition. [5][6][7][8][9][10][11] As for As 40 S 60 , it has stability in structure and its chemical property due to its average coordination number (∼2.4), which closes to the critical coordination number. However, As 20 S 80 , with a low coordination number (∼2.2), has been referred to as a soft glass semiconductor with high concentration of bond defect and a number of sublevels in the forbidden band.…”

Section: Introductionmentioning

confidence: 99%

Recovery response of optical stopping effect on P2As20S78 and Sn1As20S79 film waveguide

et al. 2012

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Effect of compressedon the size and stability of reverse micelles: Small-angle x-ray scattering and phase behavior study The Journal of Chemical Physics 118, 3329 (2003) The recovery response characteristics of optical stopping effect on the low-impurity As 20 S 80 system (P 2 As 20 S 78 and Sn 1 As 20 S 79 ) film waveguides are investigated in detail. Compared with As 20 S 80 , P 2 As 20 S 78 film waveguide deteriorates the response behavior of recovery propagation and is mainly characterized by the slow recovery propagation process with the disappearance of the fast rising edge. On the contrary, Sn 1 As 20 S 79 can improve evidently the earlier recovery stage by shortening response time of the rising edge to the milliseconds level, and also reduce the optical propagation loss. Experiments also show that the optical stopping effect can reach a saturated degree under He-Cd laser illumination for no less than 800 ms, and the addition of an assistant He-Ne laser may improve the recovery response slightly but not significantly. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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“…5 Their large nonlinearities in the optical, near-, and mid-infrared regions have made them promising candidates for fast nonlinear optical devices. 6 The measurement of the THz-induced optical Kerr effect in solid-state materials has traditionally been hampered by a lack of high intensity THz sources.…”

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confidence: 99%

“…The larger THz Kerr effect for As 2 Se 3 is consistent with the significantly larger third-order nonlinear optical coefficient in As 2 Se 3 as compared to As 2 S 3 . 5 The measured Â e 0 c Â n 2 0 n 2 , where n 0 is linear refractive index). e I peak is the peak intensity averaged through samples.…”

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Terahertz-induced Kerr effect in amorphous chalcogenide glasses

Zalkovskij

Strikwerda

Iwaszczuk

et al. 2013

Applied Physics Letters

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We have investigated the terahertz-induced third-order (Kerr) nonlinear optical properties of the amorphous chalcogenide glasses As2S3 and As2Se3. Chalcogenide glasses are known for their high optical Kerr nonlinearities which can be several hundred times greater than those of fused silica. We use high-intensity, single-cycle terahertz pulses with a maximum electrical field strength exceeding 400 kV/cm and frequency content from 0.2 to 3.0 THz. By optical Kerr-gate sampling, we measured the terahertz-induced nonlinear refractive indices at 800 nm to be n2=1.746×10−14cm2/W for As2S3 and n2=3.440×10−14 cm2/W for As2Se3.

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Optical properties and applications of chalcogenide glasses: a review

Cited by 996 publications

References 65 publications

Ultrafast active plasmonics

Ultrafast active plasmonics

Recovery response of optical stopping effect on P2As20S78 and Sn1As20S79 film waveguide

Terahertz-induced Kerr effect in amorphous chalcogenide glasses

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