Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations

Abstract

It is shown that, at helium temperatures, relaxed CdTe films reveal isolated emitters, the properties of which indicate their relation with a weakly perturbed fragment of the Shockley dislocation core. The polarization and spatial distribution of such emitters in CdTe/Si and CdTe/GaAs virtual substrates contain information on the structure of extended defects in a relaxed CdTe layer, which are important for HgCdTe epitaxy.

Formation and characterization of a CuPt-A type ordered structure in cadmium zinc telluride single crystals

“…10 Such above-mentioned excellent performance is closely related to the phase composition of the single crystals grown by the melting method. Various types of defects with different scales, including anti-site defects, 11,12 extended dislocations, 13–15 and precipitation/inclusions, 16,17 together with their effects on the electrical and optical properties have been extensively studied in various CdTe-related compounds. In general, the above-mentioned defects are harmful to the photoelectric properties of the material, because the existence of these defects destroys the periodicity of the crystal lattice and hinders the transport of carriers.…”