2007
DOI: 10.1103/physrevb.75.155103
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Optical probe of electrostatic-doping in ann-type Mott insulator

Abstract: Electrostatic-doping into an n-type Mott insulator Sm 2 CuO 4 has been successfully achieved with use of the heterojunction with an n-type band semiconductor Nb-doped SrTiO 3 . The junction exhibits rectifying currentvoltage characteristics due to the interface band discontinuity and the formation of depleted region. The application of reverse bias electric field on this junction enables the field-effect electron doping ͑presumably up to 6% per Cu atom͒ to the Mott insulator. The electromodulation absorption s… Show more

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Cited by 24 publications
(20 citation statements)
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“…It was found in some cases that the interfacial band profiles in such heterointerfaces can be well understood within the framework of a rigid-band scenario, and that the electron correlations play a minor role in determining the properties of these heterointerfaces 17 . In contrast, the electron correlation effect becomes dominant when the interfacial carrier density was modulated by external fields 18 . In this context, an investigation into the subtle balance and harmonization of the two physical scenarios is very important.…”
mentioning
confidence: 98%
“…It was found in some cases that the interfacial band profiles in such heterointerfaces can be well understood within the framework of a rigid-band scenario, and that the electron correlations play a minor role in determining the properties of these heterointerfaces 17 . In contrast, the electron correlation effect becomes dominant when the interfacial carrier density was modulated by external fields 18 . In this context, an investigation into the subtle balance and harmonization of the two physical scenarios is very important.…”
mentioning
confidence: 98%
“…[1][2][3][4] The realization of this kind of devices is a route to change carrier concentration at the interface without the structural distortions and/or chemical disorder characteristic of doping by element substitution. 5 From the applied point of view, devices made of these materials are promising due to the fact that interface properties can be modified by external stimuli, giving rise to a wide variety of phenomena such as magnetoresistance, 6 magnetocapacitance, 7 electroresistance, 8 photocarrier control of ferromagnetism, 9 etc. In this context, the study of the electronic properties of the interface is relevant 10,11 in elucidating the mechanisms governing the aforementioned phenomena.…”
mentioning
confidence: 99%
“…Although the studies are carried out on this specific system, we note that electrostatic doping of correlated materials is a subject of great current interest (see, e.g., Refs. [12][13][14][15][16]). In this context, the GdTiO 3 =SrTiO 3 system is an almost ideal model system, due to its relative chemical, electronic and structural simplicity, such as no pre-existing (bulk) structural distortions or electron correlations in the SrTiO 3 .…”
mentioning
confidence: 99%