Optical ports: next generation of MMIC control devices?

The aim of this study is to disclose how the performance of a gallium nitride (GaN)‐based X‐band low‐noise amplifier is modified by applying a blue‐ray (404 nm) laser beam. The tested amplifier employs an aluminium gallium nitride/GaN (AlGaN/GaN) high electron mobility transistor on silicon carbide whose dc and noise behaviour have been first analysed with and without optical illumination. Mild improvement of the gain together with severe degradation of the noise figure has occurred during light exposure with the amplifier operating according to the recommended bias condition. Conversely, pronounced improvement of the performance has taken place when the amplifier has been biased close to the transistor pinch‐off point. The results presented in this work follow a previous intense activity carried out on devices and amplifiers based on gallium arsenide technology.

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“…In the literature, research papers debating the effects of light exposure on GaAs-based LNAs are available [22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Caddemi¹,

Cardillo²,

Patanè

et al. 2020

IET Microwaves, Antennas & Propagation

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“…Due to the material bandgap features and the inherent physical properties, the optical sensitivity of III-V compound semiconductor devices has been widely proven and different functions in microwave circuits have been studied, e.g. control of amplifiers gain and tuning of oscillators frequency [1][2][3]. Furthermore, gallium arsenide (GaAs)-based high electron mobility transistors (HEMTs) are typically employed where demanding high-speed and low-noise requirements are pursued [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Systematic experimental analysis of an optical sensing microwave low‐noise amplifier

Caddemi¹,

Cardillo²

2019

IET Microwaves, Antennas & Propagation

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This study presents a systematic experimental analysis of the noise figure and the gain of an optical sensing low‐noise amplifier (LNA) in the X‐band region (8.5–10.5 GHz). The study has been carried out with the purpose of analysing the effects of a 635 nm optical radiation on the gain and noise figure of the LNA, by modifying the bias operating points. Upon varying the bias conditions from those suggested into the component datasheet towards the device pinch‐off, the role of the light exposure changes from causing degradation of the gain and noise figure into a clear performance enhancement. In the middle, a bias condition is found where the above LNA parameters become unresponsive to light exposure. Whilst the detrimental role played by the strong gate current increase under light exposure on the noise figure degradation is already clear, the experimental results show that close to pinch‐off this effect is completely overcome by the drain current and transconductance increases.

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“…As a matter of fact, the inherent isolation between the electronic and the optical signals allows achieving an optical control of these transistors to perform various and crucial functions for high‐frequency electronic circuits (e.g. gain control of amplifiers, frequency tuning or locking in oscillators, and phase shifting in phase shifters) . Despite that several studies have been devoted to the investigation of the behavior of the GaAs HEMT under optical illumination , the noise performance has been barely analyzed with light , while the attention has been mainly focused on the DC, small signal, and large signal characteristics .…”

Section: Introductionmentioning

confidence: 99%

Black‐box noise modeling of GaAs HEMTs under illumination

Colangeli

Ciccognani

Limiti

et al. 2015

Int J Numerical Modelling

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The present work is focused on the modeling of the noise performance of GaAs HEMTs under laser illumination. The model is straightforwardly extracted by using a polynomial approximation of the noise correlation parameters without the need for determining an equivalent circuit representation. The validity of the model is confirmed by the observed good agreement between model simulations and noise measurements with and without light up to 26GHz

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Optical ports: next generation of MMIC control devices?

Cited by 7 publications

References 4 publications

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure

Systematic experimental analysis of an optical sensing microwave low‐noise amplifier

Black‐box noise modeling of GaAs HEMTs under illumination

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