1962
DOI: 10.1088/0370-1328/79/6/307
|View full text |Cite
|
Sign up to set email alerts
|

Optical Phonon Effects in the Infra-red Spectrum of Acceptor Centres in Semiconducting Diamond

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
33
1
1

Year Published

1967
1967
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 102 publications
(37 citation statements)
references
References 19 publications
2
33
1
1
Order By: Relevance
“…2) shows three main peaks at 304, 347 and 363 meV, in accordance with the previous experiments [4]. Lines above 363 meV are not resolved.…”
Section: Resultssupporting
confidence: 91%
See 2 more Smart Citations
“…2) shows three main peaks at 304, 347 and 363 meV, in accordance with the previous experiments [4]. Lines above 363 meV are not resolved.…”
Section: Resultssupporting
confidence: 91%
“…But this is in contradiction with the previous interpretations of the infrared spectra of the excited states in diamond [4,6,7,9,10]. In these papers, the main peaks observed are attributed to the splitting of the hydrogen-like 2p state.…”
Section: Resultscontrasting
confidence: 86%
See 1 more Smart Citation
“…Austin and Wolfe (1956) and Wedepohl (1957) found that their intensity is related to the concentration of neutral (i.e., uncompensated) boron acceptors. Smith and Taylor (1962) found that when the infrared spectrum was recorded at low temperature (−188°C), it was evident that these bands were composed of numerous sharp lines, the details of which are still not completely understood. The basic shape of this spectrum can be explained in terms of the energy-level diagram shown in figure A-2.…”
Section: Box A: the Physics Of Blue Type Iib Semiconducting Diamondsmentioning
confidence: 99%
“…Однако большую ширину нельзя объяснить наложением двух перекрывающихся [полос. Следует принять предположение, выска-занное авторами 33 , которые связали большую ширину полосы 0,304 эв с уменьшением времени жизни дырки на данных возбужденных уровнях. Дырка, возбужденная на уровень 0,304 эв, почти мгновенно переходит на другой уровень, переходы на которой из основного запрещены.…”
Section: природные полупроводниковые алмазы р-типаunclassified