Optical Performance of Split-Source Z-Shaped Horizontal-Pocket and Hetero-Stacked TFET-Based Photosensors

Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in 10nm Node

“…The drain current (Id) versus gate-to-source voltage (Vgs) characteristics for a proposed device, investigating the behavior of this proposed transistor under different operating conditions (25). The dual metal gate overlap on the drain (DMG-OD) side can help to reduce the tunneling barrier and improve electron injection from the source to the channel (26). This can lead to a higher onstate current (Ion) compared to traditional TFET designs.…”

Photo sensing analysis of T-shape TFET sensor under visible range of spectrum

“…In other words, higher responsivity resembles the minimum power consumption and large efficiency. The mathematical expression used to defined R is given as [18,19]: Here, I Light represents the current under light state, I Dark current under dark state, A is the effective illumination area and I o is the light intensity. Further, optical analysis states that maximum responsivity (R) of device report near 0.76, 0.34, and 0.14 at corresponding wavelength of 300, 500, and 700 nm, respectively, as deployed in figure 10(c).…”

“…In this paper, we have examined the performance of a ZnO based T-shape TFET photo sensor under the visible range of detection [17,18]. The extension of vertical channel region uplifts the tunneling rate, which leads to fast switching operation of this TFET structure.…”

“…In other words, higher responsivity resembles the minimum power consumption and large efficiency. The mathematical expression used to defined R is given as[18,19]:…”